Ube Industries, Inc.

Ngk Insulators, Inc.

Takeshi Yamao

Tetsuo Yamada

Shinsuke Jida

Shin-ichi Sakata

Michio Honda

Takayuki Fujii

Keiichiro Watanabe

Masataka Fujinaga

Shin-Ichi Sakata

Koji Shibata

Tetsuo Nakayasu

Youky Bessyo

Takuji Ohmaru

Tadayuki Mitani

Hideo Nakamura

Yasukazu Kondo

A silicon nitride powder having a specific surface area of 4.0 to 9.0 m/g, a &#x3b2; phase proportion of less than 40 mass %, and an oxygen content of 0.20 to 0.95 mass %, wherein a frequency distribution curve obtained by measuring a volume-based particle size distribution by a laser diffraction scattering method has two peaks, peak tops of the peaks are present respectively at 0.4 to 0.7 &#x3bc;m and 1.5 to 3.0 &#x3bc;m, a ratio of frequencies of the peak tops ((frequency of the peak top in a particle diameter range of 0.4 to 0.7 &#x3bc;m)/(frequency of the peak top in a particle diameter range of 1.5 to 3.0 &#x3bc;m)) is 0.5 to 1.5, and a ratio D50/D(&#x3bc;m/&#x3bc;m) of a median diameter D50 (&#x3bc;m) determined by the measurement of particle size distribution to a specific surface area-equivalent diameter D(&#x3bc;m) calculated from the specific surface area is 3.5 or more.

Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder

A method of producing a silicon nitride powder includes heating an amorphous Si&#x2014;N(&#x2014;H)-based compound in which assuming that the specific surface area is RS (m/g) and the oxygen content ratio is RO (mass %), RS/RO is 500 or more, at a temperature rising rate of 12 to 100&#xb0; C./min in a temperature range from 1,000 to 1,400&#xb0; C. while flowing the compound by a continuous firing furnace.

Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same

A polycrystalline silicon ingot casting mold, and method for producing same. Mold release material being obtained by blending a silicon nitride powder (A) having an average particle diameter along the short axis of 0.6 to 13 &#x3bc;m with a silicon nitride powder (B) having an average particle diameter along the short axis of 0.1 to 0.3 &#x3bc;m at a weight ratio of 5:5 to 9:1; coating the mold surface with the slurry; and a heating the mold at 800 to 1200&#xb0; C. in an atmosphere containing oxygen.

Polycrystalline silicon ingot casting mold and method for producing same, and silicon nitride powder for mold release material for polycrystalline silicon ingot casting mold and slurry containing same

Provided are a polycrystalline silicon ingot casting mold and a method for producing a polycrystalline silicon ingot casting mold, with which high-quality silicon ingots can be obtained at high yields by minimizing sticking with the surfaces of the silicon ingot casting mold, and losses and damages that occur when solidified silicon ingot is released from the mold. The method for producing a polycrystalline silicon ingot casting mold having a release layer, including: forming a slurry by mixing a silicon nitride powder with water, coating the surface of the mold with the slurry, and heating the mold at 400 to 800&#xb0; C. in an atmosphere containing oxygen, after coating the slurry.

Mold for casting a polycrystalline silicon ingot, and a silicon nitride powder for a mold release material thereof, a slurry containing a silicon nitride power for a mold release layer thereof, and a mold release material for casting thereof. The present invention relates to a silicon nitride powder for a mold release material of a mold for casting a polycrystalline silicon ingot characterized in that the percentage of primary particles of granular crystals monodispersed in powders is not less than 95% in terms of the area ratio calculated by analysis of an SEM image.

Mold for casting polycrystalline silicon ingot, and silicon nitride powder for mold release material thereof, slurry containing silicon nitride powder for mold release layer thereof and mold release material for casting thereof

An oxynitride phosphor includes an &#x3b1;-sialon as the main component, which is represented by the formula: MSiAlON:Ln(wherein 0.3&#x2266;x+y&#x3c;1.5, 0&#x3c;y&#x3c;0.7, 0.3&#x2266;m&#x3c;4.5, 0&#x3c;n&#x3c;2.25, and assuming that the atomic valence of the metal M is a and the atomic valence of the lanthanide metal Ln is b, m=ax+by) and in which the aggregation index, A=D/D&#x2266;3.0 or the aggregation index A=D/D&#x2266;3.0; and a production method and usage of the phosphor.

Sialon-based oxynitride phosphor and production method thereof

To provide sialon phosphor particles or a powder exhibiting high emission intensity in the region from ultraviolet to blue and not requiring a strong pulverization operation for pulverizing a sintered body or a large aggregated lump, and a production method thereof. Sialon phosphor particles represented by the formula: MLnSiAlON(wherein M is at least one metal selected from the group consisting of Li, Ca, Mg and Y, Ln is a lanthanide metal containing at least Eu, and assuming that the valence of the metal M is a and the valence of the lanthanide metal Ln is b, ax+by=m, x is 0&#x3c;x, y&#x2266;2.0, 0.3&#x2266;m&#x3c;4.5 and 0.5&#x2266;n&#x3c;2.5), wherein in the surface analysis by X-ray photoelectron spectroscopy, the ratio between the peak area of 3dspectrum of europium and the peak area of 2p spectrum of Si is 0.5 or less.

Sialon phosphor particles and production method thereof

A red phosphor where the crystal phase constituting the phosphor is monoclinic Eu-activated CaAlSiN. A red phosphor which is Eu-activated CaAlSiNpowder having an average particle diameter of 10 &#x3bc;m or less as measured in the non-pulverized state by the laser scattering particle size distribution analysis. A light-emitting device comprising a blue light-emitting element, a yellow phosphor capable of converting the blue light emitted from the blue light-emitting element into yellow light, and the above-described red phosphor capable of converting the blue light emitted from the blue light-emitting element into red light. A method for producing Eu-activated CaAlSiN, comprising firing a raw material powder comprising CaN, AlN, SiNand EuN at 1,400 to 2,000&#xb0; C. in a nitrogen-containing atmosphere, the CaN, AlN and SiNgiving a composition falling in the region surrounded by a straight line connecting the following four points A to D in the composition diagram of FIG., and EuN being contained in an amount of 0.01 to 10 parts by weight as Eu per 100 parts by weight in total of CaN, AlN and SiN.

Red nitride phosphor and production method thereof

To provide a sialon-based phosphor capable of forming a thin film by mixing it with a resin, and giving a uniform photoluminescent light with high light emission intensity, and to provide a method for producing a sialon-based phosphor not having excessively large agglomerated particles and a wide particle size distribution, there is provided a method for producing an &#x3b1;-sialon based phosphor represented by the formula:MLnSiAlONwherein M is at least one metal selected from Ca, Mg, Y and Li, Ln is at least one lanthanide metal selected from Eu, Dy, Er, Tb, Yb and Ce, ax+by=m (assuming that the valence of metal M is a and the valence of lanthanide metal Ln is b), 0&#x3c;x&#x2266;1.5, 0.3&#x2266;m&#x2266;4.5, and 0&#x3c;n&#x3c;2.25), wherein the silicon nitride raw material used as the raw material is a silicon nitride raw material powder comprising amorphous silicon nitride and crystalline silicon nitride.

Production method of sialon-based phosphor, and sialon-based phosphor

A silicon nitride powder which provides a water-based slurry with a low viscosity and a high powder concentration. The silicon nitride powder has a specific surface area of 6 to 25 m.sup.2 /g, a number of coarse particles of coarse primary particles, agglomerated particles and/or fused particles, and having a size of 3 to 50 .mu.m, of not more than 1000 per 1 cm.sup.3 of the powder, a number of foreign metallic particles, having a size of more than 20 .mu.m, of not more than 3 per 1 cm.sup.3 of the powder, and a number of foreign metallic particles, having a size of 10 to 20 .mu.m, of not more than 15 per 1 cm.sup.3 of the powder.

Silicon nitride powder

A crystalline silicon nitride powder having a high specific surface area and an enhanced sintering property is produced with a high producibility and a large scale, by calcining a silane material comprising at least one nitrogen-containing silane compound in a nitrogen-containing inert gas mixed with 0.1 to 5%, based on the total volume of the mixed gas, of molecular oxygen, preferably at 600.degree. to 1200.degree. C.; baking the resultant amorphous silicon nitride powder in a nitrogen-containing inert gas preferably at 1400.degree. to 1700.degree. C.; and milling the resultant crystalline silicon nitride powder in a mixed gas atmosphere comprising 5 to 40% by volume of molecular oxygen and the balance consisting of an inert gas preferably at 0.degree. to 100.degree. C.

Process for producing a crystalline silicon nitride powder

A silicon nitride powder containing .beta.-phase and .alpha.-phase at a ratio by weight (.beta./.alpha.) of from 0.018 to 0.032, and composed of crystallites 0.2 .mu.m or less in diameter.

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Ube, Japan

Takeshi Yamao