Tokyo Electron Limited

Takeshi Yamamoto

Hideaki Yamasaki

Shinya Okabe

Toru Onishi

When forming a TiN film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing chamber, TiClgas and a nitriding gas are fed into the processing chamber, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a TiN unit film. In the second step (step 2), a nitriding gas is fed into the processing container, a plasma of the gas is generated, and the TiN unit film is subjected to plasma nitriding.

Method for forming TiN and storage medium

A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.

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Yamanashi, Japan

Takeshi Yamamoto