Shindengen Electric Manufacturing Company Limited

Takeshi Yamaguchi

Mizue Kitada

Takeshi Asada

Daisuke Arai

A power semiconductor device of the present invention includes: a semiconductor base body which has a super junction structure formed of a plurality of first conductive-type columnar regions and a plurality of second conductive-type columnar regions; a plurality of trenches; gate insulation films; gate electrodes; an interlayer insulation film; contact holes formed such that two or more contact holes are formed between two trenches disposed adjacently to each other; metal plugs formed by filling the inside of the contact holes with metal; and an electrode, wherein a first conductive-type high concentration diffusion region is formed only between the trench and the metal plug disposed closest to the trench between each two trenches disposed adjacently to each other. According to the power semiconductor device of the present invention, it is possible to provide a power semiconductor device which satisfies a demand for reduction in cost and downsizing of electronic equipment, and has a large breakdown strength.

Power semiconductor device having a first and a second conductive-type columnar regions formed alternately with each other and method of manufacturing the power semiconductor device

A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n&#x2212;-type column region, p&#x2212;-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n&#x2212;-type column region between a predetermined p&#x2212;-type column region disposed closest to a gate pad part and a predetermined n&#x2212;-type column region disposed closest to the gate pad part among the n&#x2212;-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.

Power semiconductor device and method of manufacturing power semiconductor device

A semiconductor device includes: a semiconductor base body where a second semiconductor layer is stacked on a first semiconductor layer, a trench is formed on a surface of the second semiconductor layer, and a third semiconductor layer which is formed of an epitaxial layer is formed in the inside of the trench; a first electrode; an interlayer insulation film which has a predetermined opening; and a second electrode, wherein metal is filled in the opening, the opening is disposed at a position avoiding a center portion of the third semiconductor layer, the second electrode is connected to the third semiconductor layer through the metal, and a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a drift layerof a first conductivity type, a base layerof a second conductivity type that is disposed on the drift layerand is connected to a source electrode, and a column layerof a second conductivity type that is connected to the source electrodeand penetrates the base layerto extend into the drift layer

Growing community of inventors

Saitama, Japan

Takeshi Yamaguchi