Kabushiki Kaisha Toshiba

Intermolecular, Inc.

Sandisk 3d LLC

Panasonic Intellectual Property Corporation of America

Toshiba Memory Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Sony Corporation

Canon Kabushiki Kaisha

Kyocera Corporation

Panasonic Corporation

Nikon Corporation

Sony Group Corporation

Kioxia Corporation

Calsonic Kansei Corporation

Takeshi Yamaguchi

Tim Minvielle

Yun Yu Wang

Imran Hashim

Shigeki Kobayashi

Masaki Yamato

Tomoki Takano

Vidyut Gopal

Tony P Chiang

Dipankar Pramanik

Hieu T Pham

Toshiharu Tanaka

Takeshi Takagi

Hiroyuki Ode

Takayuki Tsukamoto

Hiroyuki Fukumizu

Hong Sheng Yang

Hiroshi Nakatsuka

Katsu Takeda

Katsunori Moritoki

Yasuhiro Nojiri

Randall Higuchi

Natsuki Fukuda

Chikayoshi Kamata

Mutsumi Okajima

Mihir Tendulkar

Kohichi Kubo

Atsushi Oga

Yasushi Kawata

Kojiro Okuyama

Tsukasa Nakai

Shinya Aoki

Akio Murayama

Mariko Hayashi

Chien-Lan Hsueh

Yoshiaki Honma

Kazutoshi Iwata

Kisako Ninomiya

Tatsuo Shimizu

Yukie Nishikawa

Takahiro Hirai

Takeshi Araki

Zhendong Hong

Yuuzo Hisatake

Kazuhiko Yamamoto

Hirofumi Inoue

David E Lazovsky

Fumihiko Aiga

Hideki Satake

Tsutomu Haruta

Masamichi Suzuki

Eiji Makino

Kazuyuki Sunohara

Noburu Fukushima

Nan Lu

Kiyoshi Ikeda

Ryan C Clarke

Hiroshi Watanabe

Akira Kikitsu

Yutaka Koizumi

Satoshi Ishikawa

Katsuyuki Sekine

Akira Goto

Haruhiko Okumura

Hiroki Tajima

Koichi Kubo

Reika Ichihara

Rei Hasegawa

Hajime Yamaguchi

Goh Itoh

Masahiko Akiyama

Akihiro Yamanaka

Akira Takashima

Daisuke Matsushita

Rieko Fukushima

Yasushi Iijima

Hiroyuki Maeda

Kei Watanabe

Yoshihiro Saito

Jinhong Tong

Yujiro Hara

Ryo Ando

Sumio Ashida

Itaru Watanabe

Shinichi Nakao

Takahiko Sasaki

Hiroyuki Uejima

Kenji Aoyama

Yuzo Hisatake

Hisao Fujiwara

Kohki Takatoh

Masataka Wakamatsu

Takuya Konno

Takeshi Kono

Mitsuru Satou

Albert Sanghyup Lee

Atsushi Hirai

Masashi Osaka

Shinichi Kojima

Daigo Imano

A transmission apparatus includes a first transmission unit that transmits sound data to a first sound channel in a transmission path, and a second transmission unit that transmits meta data related to the sound data to a second sound channel in the transmission path while ensuring synchronization with the sound data.

Transmission apparatus, reception apparatus, and acoustic system

A semiconductor device of the embodiment includes a plurality of scan chains, a shift clock control circuit, and a shift clock generation circuit. The plurality of scan chains each include a plurality of scan flip-flops. The shift clock control circuit outputs, to each of the plurality of scan chains, a control signal that non-inverts or inverts a scan clock signal. The shift clock generation circuit is provided to each of the plurality of scan flip-flops and generates a non-inverted scan clock signal or an inverted scan clock signal based on the control signal, the non-inverted scan clock signal being obtained by non-inverting the scan clock signal, the inverted scan clock signal being obtained by inverting the scan clock signal.

Semiconductor device and semiconductor device examination method

A laminating apparatus that prevents partial protrusion of a film during pressing and ensures the uniformity of the thickness of a resulting laminate is provided. The laminating apparatus includes a pressing device for pressing a substrate and a film (a workpiece). The pressing device includes a press block movable back and forth, a pressing plate mountable to the press block, a plurality of heat sources (cartridge heaters) capable of heating the pressing plate, and a control system set up to perform heating control on the heat sources. The heat sources are arranged so as to be able to separately heat a central portion of the pressing plate and a peripheral portion thereof annularly surrounding the central portion.

Laminating apparatus and laminating method using same

Provided is a laminating apparatus configured to improve the uniformity of the thickness of a laminate to be obtained to improve the yield of a product, such as a laminate. The laminating apparatus includes a pressing device including a first press block that is advanceable and retreatable, a second press block arranged to face the first press block, a first pressing rubber mounted inside the first press block, and a second pressing rubber mounted inside the second press block, the first pressing rubber and the second pressing rubber facing each other, the first pressing rubber having formed on a surface thereof facing the second pressing rubber a convex frame configured to surround a peripheral edge portion thereof.

Laminating apparatus

A laminating apparatus for improving the uniformity of the thickness of a resulting laminate to improve the yield of products such as laminates is provided. A pressing device includes: a first press block movable back and forth; a second press block disposed in opposed relation to the first press block; a first pressing plate mounted to the inside of the first press block; and a second pressing plate mounted to the inside of the second press block. The first pressing plate and the second pressing plate are opposed to each other. A surface of the first pressing plate which is opposed to the second pressing plate has a peripheral portion formed into a tapered surface in such a manner that the distance from the second pressing plate increases in an outward direction.

A laminating apparatus is provided, which is capable of producing a laminate having a highly planarized surface. The laminating apparatus is arranged to laminate a film on an irregular surface of a substrate having irregularities, and includes a vacuum laminating device which brings the film into close conformal contact with the substrate under reduced pressure to form a first temporary laminate, a first flat press device which presses the first temporary laminate to form a second temporary laminate having a substantially planarized irregular surface, and a second flat press device which presses the second temporary laminate under different conditions from the first flat press device to form a product laminate having a planar surface.

A signal processing apparatus includes: an audio signal processing unit configured to perform wavefront synthesis processing for at least part of a plurality of sound source data; a first output unit configured to output N-channel audio signals output from the audio signal processing unit to a first speaker device; a mix processing unit configured to mix the N-channel audio signals output from the audio signal processing unit; and a second output unit configured to output an audio signal output from the mix processing unit to a second speaker device.

Signal processing apparatus, signal processing method, and signal processing system

According to one embodiment, a semiconductor circuit includes a plurality of memories. The memories are connected to one another in series such that an output node of the memory of the first stage is connected to an input node of the memory of the second stage. The semiconductor circuit includes a test circuit that outputs test data to an input node of the memory of the first stage among the plurality of memories, and a comparison circuit that compares data output from an output node of the memory of the final stage among the plurality of memories with expectation value data.

Semiconductor circuit

A strain quantity obtaining unit is provided that obtains a strain quantity at an interval faster than variation in the strain to be detected and stores the maximum value of the strain quantity. When a touch coordinate is obtained at a predetermined sampling interval, if the maximum value of the strain quantity when the touch coordinate is obtained does not exceed a strain quantity threshold value, the touch coordinate is not caused to be effective. However, if the maximum value of the strain quantity when the touch coordinate is obtained exceeds a strain quantity threshold value, the touch coordinate is caused to be effective. If a touch coordinate is caused to be effective once, the touch coordinate is caused to be effective continuously until an instructing object is separated from an operation surface of a touch panel unit at a predetermined distance or more in a perpendicular direction.

Electronic apparatus which effects touch coordinate based on proximity and strain

A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a first insulating film disposed aligned with the second wiring line in the first direction; a first film disposed between the first wiring line and the first insulating film; and a second film disposed between the first insulating film and the first film and configured from a material different from that of the first film.

Semiconductor memory device and method of manufacturing the same

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

Semiconductor device and method of manufacturing the same

According to one embodiment, a memory device includes a stacked body. The stacked body includes first and second electrodes, and an oxide layer provided between the first and second electrodes. The second electrode includes a semiconductor layer, and a metal-containing region including at least one of first or second metallic element and being provided between at least a portion of the semiconductor layer and at least a portion of the oxide layer. The first metallic element includes at least one selected from Pt, Pd, Ir, Ru, Re, and Os. The second metallic element includes at least one selected Ti, W, Mo, and Ta. The stacked body has first and second states. The first state is obtained by causing a current to flow in the stacked body from the second toward first electrode. The second state is obtained by causing a current to flow from the first toward second electrode.

Memory device

A semiconductor memory device according to an embodiment includes: a first wiring line extending in a first direction; a second wiring line extending in a second direction, the second direction intersecting the first direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a channel body disposed at a first end of the first wiring line; a third wiring line electrically connected to the first wiring line via the channel body; and a gate wiring line extending in the first direction and facing the channel body from the second direction.

Semiconductor memory device

According to one embodiment, a memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction crossing the first direction and a resistance change film provided between the first wiring and the second wiring. The second wiring includes a first conductive layer and a first intermediate layer including a first region provided between the first conductive layer and the resistance change film. The first intermediate layer includes a material having nonlinear resistance characteristics.

Memory device and method for manufacturing the same

An electronic device includes a housing, a display that displays predetermined information, an electrostatic-capacitance touch panel that allows visible light corresponding to display contents of the display to pass through the touch panel, a transparent member that protects the touch panel and that allows the visible light to pass through the transparent member, and a detector that detects deformation of the transparent member. The touch panel detects a pair of two-dimensional coordinates indicated by an indicator, wherein when the touch panel detects a plurality of pairs of two-dimensional coordinates and when the detector detects a predetermined deformation amount; at least one pair of two-dimensional coordinates detected during a predetermined time period prior to a time when the deformation is detected is validated.

Electronic device and coordinate detecting method

Growing community of inventors

Kanagawa, Japan

Takeshi Yamaguchi