Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Sandisk Technologies Inc.

Monsanto Kasei Company

Takeshi Watanabe

Yuusuke Takano

Takashi Imoto

Soichi Homma

Katsunori Shibuya

Yoshiaki Goto

Ayana Amano

Yuki Sugo

Masaya Shima

Ryuji Kamoshita

Hiroki Kashiwagi

Koji Takimoto

Yusuke Akada

Yuji Karakane

Yoshinori Okayama

Ken Hayakawa

Akihiko Yanagida

Keiichiro Hattori

Yoshihiro Nagura

Kouta Fujikawa

Hitoshi Suzuki

Yuki Uchida

Reishuku Ikebe

According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.

Semiconductor device and method of inspecting the same

A semiconductor device of an embodiment includes: a wiring board; a semiconductor chip mounted on the wiring board; and a resin-containing layer bonded on the wiring board so as to fix the semiconductor chip to the wiring board. The resin-containing layer contains a resin-containing material having a breaking strength of 15 MPa or more at 125&#xb0; C.

Semiconductor device having a resin layer sealing a plurality of semiconductor chips stacked on first semiconductor chips

A semiconductor device according to an embodiment comprises a substrate and a first semiconductor chip provided above the substrate. A second semiconductor chip is provided above the first semiconductor chip. A spacer chip is provided between the first semiconductor chip and the second semiconductor chip with regard to a direction orthogonal to a mount surface of the substrate, the spacer chip being made of a first resin material. A first adhesive material is provided between the spacer chip and the substrate or the first semiconductor chip. A second adhesive material is provided between the spacer chip and the second semiconductor chip. A second resin material covers the first and second semiconductor chips and the spacer chip.

Semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a sealing resin layer containing an inorganic filler so as to seal a semiconductor chip, removing a portion of the surface of the sealing resin layer by dry etching such that a portion of the inorganic filler is exposed, and forming a shield layer so as to cover at least the sealing resin layer.

Method of manufacturing semiconductor device and semiconductor device

A wet chemical processing tool is provided, which includes an assembly of a container and at least three nozzles. The container includes a volume configured to contain at least one substrate therein. The wet chemical processing tool includes a flow controller configured to actuate and de-actuate flow of the liquid through each of the at least three nozzles. The flow controller can be operated by an automated program that includes a plurality of wet processing steps. At least two of the plurality of wet processing steps generate a respective unique processing-step vortex flow pattern by de-actuating flow of the liquid from a respective set of at least one deactivated nozzle selected from the at least three nozzles while actuating each of the at least three nozzles that does not belong to the set of at least one deactivated nozzle.

Vortex pattern wet processing tool and etching method

According to one embodiment, in a method for manufacturing a semiconductor device, a semiconductor chip is provided on a first surface of a substrate having the first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A resin that seals the first surface of the semiconductor chip is formed on the semiconductor chip. A conductive film electrically connectable to a ground potential source is formed on an upper surface of the resin and a side surface of the resin. A metal oxide film or a metal nitride film is formed on the conductive film by depositing metal on the conductive film in an environment containing oxygen or nitrogen.

Semiconductor device including electromagnetic interference (EMI) shielding layer and method for manufacturing the semiconductor device

A semiconductor manufacturing device has an upper cover configured to be arranged above top surface of unshielded semiconductor device which are mounted on a tray placed on a carrier to go through electromagnetic shielding, and a displacement detector configured to detect an abnormality when the upper cover is raised by at least one of the semiconductor device which is brought into contact with a bottom surface of the upper cover.

Semiconductor manufacturing device and semiconductor manufacturing method

In a method for manufacturing a semiconductor device, a resin layer including an inorganic filler is molded on a surface of a substrate which includes semiconductor elements attached thereto by an adhesive, and terminals electrically connected to the semiconductor elements on another surface thereof. The molded substrate is cut so as to expose a conductive body electrically connected to an external terminal maintainable at ground potential. The surface of the resin layer of the substrate is sputter-etched in a vacuum environment, in a state where a plurality of the cut substrates is provided in a tray so that the surface of the substrate faces the tray. A metal layer is sputtered so as to be electrically connected to the conductive body on the surface and the cut surface in a state where the substrate is provided in the tray while maintaining the vacuum environment after sputter-etching.

Method for manufacturing semiconductor device and semiconductor device

A semiconductor manufacturing device has a conveyor configured to convey a tray having an unshielded semiconductor device mounted thereon to go through electromagnetic shielding, and a controller configured to control the conveyor. The controller performs control to take out the tray from a tray supply storage storing trays each having an unshielded semiconductor device mounted thereon to go through the electromagnetic shielding, place the tray on a carrier, and convey this carrier to a sputtering device which coats the unshielded semiconductor device with a sputtering material for the electromagnetic shielding, and the controller performs control to take out, from the sputtering device, the carrier having the tray placed thereon with an electromagnetically shielded semiconductor device being mounted on the tray, convey the tray, pick up the tray having the electromagnetically shielded semiconductor device mounted thereon from the carrier, and store the tray in the tray supply storage.

A semiconductor device includes a conductive shield layer that has a first portion covering a surface of a sealing resin layer and a second portion covering side surfaces of the sealing resin layer and side surfaces of the substrate. Portions of wiring layers, including a grounding wire, on or in the substrate have cut planes which are exposed to the side surfaces of the substrate and spread out in a thickness direction of the substrate. A cut plane of the grounding wire is electrically connected to the shield layer. An area of the cut plane of the grounding wire is larger than an area of a cross section of the grounding wire parallel to, and inward of the substrate from, the cut plane of the grounding wire.

Semiconductor device and method of manufacturing semiconductor device

In a manufacturing method of a semiconductor device according to an embodiment, a plurality of semiconductor packages each including a semiconductor chip mounted on a wiring board and a sealing resin layer as objects to be processed, and a tray including a plurality of housing parts are prepared. A depressed portion having a non-penetrating shape or a penetrating shape is formed in the housing part. The semiconductor packages are disposed in the plural housing parts respectively. By sputtering a metal material on the semiconductor package housed in the tray, a conductive shield layer is formed.

Manufacturing method of a conductive shield layer in semiconductor device

A thermoplastic composition comprising copolymers which contain 45-75% by weight of a vinyl cyanide and 25-55% by weight of an aromatic vinyl compound is described. This composition provides high stress cracking resistance in the presence of HCFC-123 and HCFC-141b.

Growing community of inventors

Yokkaichi, Japan

Takeshi Watanabe