Fujitsu Corporation

Fujitsu Microelectronics Limited

Takeshi Tomioka

Naoya Okamoto

Hideyasu Ando

Shinji Yamaura

Noritsugu Osaki

Haruhiko Hino

Noritsuga Osaki

A wireless tag includes: an antenna; an integrated circuit configured to be electrically connected to the antenna; a package configured to integrally subject the antenna and the integrated circuit to packaging; and a boundary portion configured to be located between a first portion including the integrated circuit in the package and a second portion not including the integrated circuit, wherein the boundary portion is configured so as to be more easily torn apart than a portion other than the boundary portion in the package.

Wireless tag

A nonvolatile memory is accessed by a memory control circuit and stores temperature information indicating a temperature measured by a temperature sensor. A power supply control circuit supplies a first power supply voltage to the temperature sensor in response to a request for temperature measurement received via an antenna, and supplies a second power supply voltage to the nonvolatile memory and the memory control circuit after the temperature sensor measures the temperature. While the temperature sensor is measuring the temperature, the nonvolatile memory and the memory control circuit do not operate and thus do not generate heat. Therefore, the temperature sensor can accurately measure the temperature without being influenced from the heat generation caused by the operation of circuits in an RFID transponder.

RFID transponder and RFID transponder chip

The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.

III-V system compound semiconductor device and method for manufacturing

Growing community of inventors

Kawasaki, Japan

Takeshi Tomioka