Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Metals, Ltd.

Takeshi Terasaki

Makoto Kitano

Akihiro Yaguchi

Naotaka Tanaka

Asao Nishimura

Hideo Miura

Ichiro Anjoh

Junichi Saeki

Ryo Haruta

Tomohisa Suzuki

Hiroki Yamamoto

Hirotaka Eshima

Ryuji Kohno

Fumihito Oka

Tatsuya Nagata

Atsushi Kazama

Junichi Arita

Naofumi Chiwata

Takashi Fujimura

Yoshinari Hori

Masaaki Mukaide

Chikako Imura

Chikara Nakajima

Kiyomi Kojima

Provided is a semiconductor module enabling to effectively reduce, with a relatively simple structure, a thermal strain occurring in a bonding section between a semiconductor chip and other conductor members. The semiconductor module is characterized by being provided with: a first wiring layer; a semiconductor element bonded on the first wiring layer via a first bonding layer; a first electrode bonded on the semiconductor element via a second bonding layer; a second electrode connected on the first electrode; and a second wiring layer connected on the second electrode. The semiconductor module is also characterized in that: the width of the second electrode, said width being in the short-side direction, is more than the thickness of the first electrode; and the second electrode is disposed at a position off the center position of the semiconductor element.

Semiconductor module and method for manufacturing semiconductor module

This manufacturing facility management optimization device: on the basis of an operation condition of a manufacturing facility, creates, in a simulated manner in time series, an operation state which includes a measurement value, product yield, and quantities of raw materials consumed, of the manufacturing facility; detects an anomaly from the created operation state; identifies maintenance which corresponds to the detected anomaly, corrects the operation condition on the basis of the identified maintenance, and creates a plurality of post-correction operation condition candidates; creates, in a simulated manner in time series, a plurality of post-correction operation state candidates on the basis of the plurality of post-correction operation condition candidates; on the basis of the product yield and the quantities of raw materials consumed in the plurality of pre- and post-correction operation state candidates, and a unit price, creates a management index for the operation state and each of the plurality of post-correction operation state candidates; and, from among the plurality of post-correction operation condition candidates, identifies the candidate which optimizes the management index.

Manufacturing facility management optimization device

It is an objective of the invention to provide a high-power supply cable characterized in that even when mounted in a narrow space where the cable undergoes a repetitive bending motion, any undesirable deformation out of the bending plane is small. There is provided a power-supply cable including: an electric wire including an electrical conductor and a resin sheath covering the electrical conductor, the electric wire having a tendency to generate a curl under a no-load condition, the curl having a curling direction, the curling direction being a normal to the curl, the electric wire having one or more longitudinal ends; a connecting terminal disposed at one of the longitudinal ends of the electric wire; and a curling tendency direction indicator showing the curling direction, the indicator being disposed along a normal line to the curl of the electric wire.

Power-supply cable and apparatus for manufacturing electric wire used for said power-supply cable

A display apparatus is disclosed with a vacuum seal member which has a shell structure. The display apparatus includes an anode substrate, a planar cathode substrate forming an electron emitting chamber vacuously sealed between the cathode substrate and the anode substrate, electron sources formed on the cathode substrate, phosphors formed on the anode substrate, and a vacuum seal member forming a pressure balancing chamber on the back of the electron emitting chamber side of the cathode substrate. The vacuum seal member is placed covering the back of the electron emitting chamber side, and has a shell structure for receiving the atmospheric pressure.

Display apparatus with shell-structured vacuum seal

A semiconductor device which can improve the connection reliability of solder bumps and productivity in manufacturing. Insulating tape having wiring patterns on its surface is bonded to a lead frame. Semiconductor elements are loaded and circuit formed surfaces and sides of the semiconductor elements are sealed with sealing resin. After arrangements of individual semiconductor devices are formed, the lead frame is separated into individual metal plates to form individual semiconductor devices. Such simultaneous production of a plurality of semiconductor devices enhances productivity, and improves flatness of the insulating tape, whereby the connection reliability of solder bumps is improved.

Semiconductor device and lead frame therefor

A semiconductor device which can improve the connection reliability of solder bumps and productivity in manufacturing. Insulating tape having wiring patterns on its surface is bond ed to a lead frame. Semiconductor elements are loaded and circuit formed surfaces and sides of the semiconductor elements are sealed with sealing resin. After arrangements of individual semiconductor devices are formed, the lead frame is separated into individual metal plates to form individual semiconductor devices. Such simultaneous production of a plurality of semiconductor devices enhances productivity, and improves flatness of the insulating tape, whereby the connection reliability of solder bumps is improved.

A push-in type semiconductor chip has a semiconductor device, a support electrode body bonded to one of the end portions of the semiconductor chip and supported by, and fixed to, a heat spreader at a support fixing portion thereof, a lead electrode body bonded to the other end portion of the semiconductor chip and an insulating/sealing member disposed at the bond portion between the semiconductor chip and the support electrode body and at the bond portion between the semiconductor chip and the lead electrode body. The support electrode body includes a first portion having an outer diameter different from that of the support fixing portion at which the support electrode body is supported and fixed by the heat spreader. By setting a predetermined relationship between the outer diameters of the first portion and the support fixing portion, deformation and breakage of the semiconductor chip during assembly can be prevented.

Push-in type semiconductor device including heat spreader

A TSOP type semiconductor device having a LOC structure employing a copper (alloy) type frame prevents resin cracks that occur in a reliability test such as a temperature cycle test. The TSOP type semiconductor device has narrower common inner leads where a resin crack would be likely to occur first, and has a thinner chip.

TSOP type semiconductor device

Growing community of inventors

Tokyo, Japan

Takeshi Terasaki