Hitachi-Kokusai Electric Inc.

Other

Adtec Plasma Technology Co., Ltd.

Takeshi Taniguchi

Naofumi Ohashi

Nobuo Owada

Yuichi Wada

Noriyoshi Sato

Shuitsu Fujii

Hiroshi Mase

Tamiya Fujiwara

A manufacturing method of a semiconductor device includes the steps of carrying a substrate in a processing chamber, bringing the processing chamber into a state at a first pressure by supplying a silicon compound gas which contains carbon and hydrogen into the processing chamber, forming a silicon oxide film on the substrate by irradiating a UV light to the silicon compound gas supplied into the processing chamber in the state kept at the first pressure, and decompression process to bring the processing chamber into a state at a second pressure lower than the first pressure. This makes it possible to form the dense silicon oxide film in the trench with high aspect ratio and small width.

Manufacturing method of semiconductor device

To provide a generator capable of generating plasma and ozone with high efficiency and easy to handle, with a simple structure. An electrode partis formed of electrodesandwithout dielectric material interposed therebetween. An arc-extinguishing capacitoras a charge storage part for storing charge is connected in series to the electrode part. An AC power sourcegenerating plasma by causing self-arc-extinguishing discharge between the electrodesandby applying AC voltage to charge and discharge the arc-extinguishing capacitor, is connected to both ends of a circuit in which the electrode partand the arc-extinguishing capacitorare connected in series. The arc-extinguishing capacitorand one electrodeof the electrode partconnected thereto are unitized, for making the electrode part multi-polarized. A unit is constituted of a floating electrode serving as both of the one electrodeof the electrode partand one electrode of the arc-extinguishing capacitor, an insulating material provided around the floating electrode and a grounding electrode provided around the insulating material.

Plasma generator, ozone generator, substrate processing apparatus and manufacturing method of semiconductor device

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Tokyo, Japan

Takeshi Taniguchi