Sony Corporation

Sony Semiconductor Solutions Corporation

Nec Electronics Corporation

Takeshi Takeda

Tadayuki Dofuku

Kenji Takeo

Kaori Takimoto

Masayuki Okada

Hidemitsu Aoki

Itaru Oshiyama

Yuki Miyanami

Yorito Sakano

Shinji Miyazawa

Masaki Okamoto

Yorinobu Kunimune

Tadayuki Kimura

Yukihiro Ando

Takamasa Itou

Mieko Hasegawa

Katsuhisa Kugimiya

A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

Solid-state imaging device and method of operating the same, and electronic apparatus and method of operating the same

A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.

Imaging element and method of manufacturing the same

Solid-State imaging device and electronic apparatus including plurality of charge holding electrodes and method of operating the same

Solid-state imaging device and electronic apparatus including plurality of charge holding electrodes, and method of operating the same

There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

Solid-state imaging device and electronic apparatus with improved storage portion

There is provided a solid-state image pickup device including a pixel area in which a plurality of pixels are arranged. The pixels include an accumulation section accumulating a charge acquired by photoelectric conversion, a plurality of detection sections detecting the charge accumulated in the accumulation section, a connection separation control section controlling connection or separation of the detection sections, an output section outputting a first signal corresponding to a potential of each detection section in a separation state in which the connection separation control section separates the detection sections, or outputting a second signal corresponding to a potential of each detection section in a connection state in which the connection separation control section connects the detection sections, and an output selection section selecting whether to output the first signal from the output section or output the second signal from the output section, based on a value of the first signal.

Solid-state imaging device, electronic device and driving method thereof with selective second reading

A solid-state imaging apparatus includes a plurality of photoelectric conversion units configured to generate signal charge from light received at light-receiving surfaces thereof, the plurality of photoelectric conversion units being provided in the image-sensing area of a substrate; a charge reading unit configured to read signal charge generated by the photoelectric conversion units, a charge readout channel area thereof being provided in the image-sensing area of the substrate; a transfer register unit configured to transfer signal charge read from the plurality of photoelectric conversion units by the charge reading unit, a charge transfer channel area thereof being provided in the image-sensing area of the substrate; and a light-shielding unit that is provided in the image-sensing area of the substrate and that has an opening through which light is transmitted formed in an area corresponding to a light-receiving surface of a respective photoelectric conversion unit.

Solid-state imaging apparatus, camera, and method of manufacturing solid-state imaging apparatus

Growing community of inventors

Kanagawa, Japan

Takeshi Takeda