Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Arkray, Inc.

Sekisui Medical Co., Ltd.

Takeshi Takagi

Yoshihiko Kanzawa

Koji Katayama

Shunsaku Muraoka

Zhiqiang Wei

Satoru Mitani

Akira Inoue

Takumi Mikawa

Akira Asai

Yoshio Kawashima

Haruyuki Sorada

Kazuhiko Shimakawa

Mitsuteru Iijima

Tohru Saitoh

Takeki Ninomiya

Yoshihiro Hara

Koichiro Yuki

Teruhito Ohnishi

Satoru Fujii

Minoru Kubo

Katsuya Nozawa

Kenji Toyoda

Takahiro Kawashima

Ryoko Miyanaga

Koji Arita

Yoshikazu Katoh

Koichi Osano

Junko Iwanaga

Yo Ichikawa

Tatsuo Kamata

Ken Kawai

Koji Sugiyama

Takashi Okada

Akira Sezaki

Ryotaro Azuma

Yoshihisa Minami

Toshikatsu Sakai

Taizo Fujii

Teruhito Oonishi

Mitsuo Sugiura

Takuya Yotani

Yukio Hayakawa

Yusuke Nakayama

Kenji Harafuji

Yuki Ito

Kunitoshi Aono

Takayuki Oka

Ryutaro Yasuhara

Ichirou Takahashi

Hidenari Yamagata

Koji Okumura

Shin-ichi Oota

Koji Egawa

Kouji Katayama

Akira Kuga

Makoto Takahara

Suguru Yoshida

Yoshihiro Nomura

Takeshi Asami

Chiaki Miyamoto

Zhiquiang Wei

A filter device includes a first filter, a first retaining member that has a hollow shape, the first filter being fitted inside the first retaining member, a second filter that has a smaller pore size than the first filter, a second retaining member that is disposed downstream of the first filter and that has a hollow shape, the second filter being fitted inside the second retaining member, and a spacer that has a hollow shape, that is disposed between the first retaining member and the second retaining member, that maintains a non-contact state between the first filter and the second filter, and that includes a first contact portion contacting the first filter.

Filter device, column, and liquid chromatography device

A liquid chromatography measurement method includes: switching between a first measurement mode using a liquid chromatography method in which hemoglobin A1c and a hemoglobin variant are measured in a measurement sample by sequentially delivering a first component-separating eluent, a second component-separating eluent and a wash eluent to an analytical column, and a second measurement mode using the liquid chromatography method in which the hemoglobin A1c is measured by sequentially delivering the first component-separating eluent and the wash eluent to the analytical column; delivering the wash eluent in the first measurement mode prior to an influence from the second component-separating eluent disappearing such that a first retention time of the hemoglobin A1c in the first measurement mode and a second retention time of the hemoglobin A1c in the second measurement mode are substantially the same as each other; and delivering the first component-separating eluent after the wash eluent.

Liquid chromatography measurement method, liquid chromatography measurement instrument, and liquid chromatography measurement program storage medium

An estimation method for a variable resistance element including (i) a first electrode, (ii) a second electrode, and therebetween (iii) a variable resistance layer in which a local region is formed which has resistive status that reversibly changes according to an electric pulse applied between the first electrode and the second electrode, the estimation method including: obtaining, when changes are made to the resistive status of the local region, measurement values each indicating a resistance state after one of the changes; and determining, based on a distribution of the obtained measurement values, an estimated amount of a physical parameter regarding structural characteristics of the local region by a calculation.

Estimation method, estimation device, and inspection device for variable resistance element, and nonvolatile memory device

The present invention relates to a blood analysis apparatus X for measuring concentrations of glucose and glycohemoglobin in blood. The blood analysis apparatus X is configured to perform the concentration measurement of the glucose and the glycohemoglobin by one sampling of blood. The blood analysis apparatus X is preferably configured to simultaneously carry out sample preparations for concentration measurement of the glucose and the glycohemoglobin by one sample preparation. The blood analysis apparatus X may be configured to perform dilution of a blood sample for measuring the glycohemoglobin and dilution of a blood sample for measuring the glucose using the same diluent.

Blood analysis apparatus

A method of driving a variable resistance element comprises: before a first write step is performed, applying an initial voltage pulse of a first polarity to change a resistance value of a metal oxide layer from a resistance value corresponding to an initial state of the metal oxide layer to another resistance value; wherein when the resistance value corresponding to the initial state is R, the resistance value corresponding to a write state is RL, the resistance value corresponding to an erase state is RH, another resistance value is R, a maximum value of the current flowing when the initial voltage pulse is applied is IbRL, a maximum value of the current flowing when the write voltage pulse is applied is IRL, and a maximum value of the current flowing when the erase voltage pulse is applied is IRH, R&#x3e;RH&#x3e;R&#x2267;RL, and |IRL|&#x3e;|IbRL| are satisfied.

Driving method of variable resistance element and non-volatile memory device

A liquid chromatography apparatus is provided with a sample preparation unit, a column that separates components of a sample, an eluent supplier that includes a feeder for supplying eluents to the column, a flow path directional valve capable of introducing fixed amounts of the sample and the eluents to the column, an analyzer for analyzing a test solution composed of the sample components separated by the column and one of the eluents, and a controller, wherein the eluent supplier supplies the eluents to the flow path directional valve in an unmixed state. As a result of employing this configuration, analysis time is shortened and eluent consumption is reduced.

Liquid chromatography apparatus and liquid chromatography

A method for programming a nonvolatile memory element includes: decreasing a resistance value of a variable resistance element in an initial state, by applying an initialization voltage pulse to a series circuit in which a load resistor having a first resistance value is connected in series with the variable resistance element and a MSM diode; applying, after the decreasing, a write voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a second resistance value lower than the first resistance value; and applying, after the decreasing, an erase voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a third resistance value lower than the first resistance value.

Method for programming nonvolatile memory element, method for initializing nonvolatile memory element, and nonvolatile memory device

A nonvolatile memory element of the present invention comprises a first electrode (), a second electrode (), and a resistance variable layer () disposed between the first electrode () and the second electrode (), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (), (), and the resistance variable layer () comprises at least a tantalum oxide, and is configured to satisfy 0&#x3c;x&#x3c;2.5 when the tantalum oxide is represented by TaOx.

Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element

Provided is a method for driving a variable resistance nonvolatile storage element that can improve the information holding capability. The method includes: determining whether or not a current that flows through the nonvolatile storage element is larger than or equal to a first verify level IRL (Verify); determining whether or not a current that flows through the nonvolatile storage element is smaller than or equal to a second verify level IRH (Verify); and determining that the nonvolatile storage element is in the second resistance state when the current that flows through the nonvolatile storage element is smaller than a current reference level Iref, and determining that the nonvolatile storage element is in the first resistance state when the current is larger than the current reference level Iref, the current reference level Iref satisfying (IRL (Verify)+IRH (Verify))/2&#x3c;Iref&#x3c;IRL (Verify).

Method for driving nonvolatile storage element, and nonvolatile storage device

A method for driving a nonvolatile memory element includes: a writing step of changing a variable resistance layer to a low resistance state, by applying a writing voltage pulse having a first polarity; and an erasing step of changing the variable resistance layer to a high resistance state, by applying an erasing voltage pulse having a second polarity different from the first polarity, wherein in the writing step, a first input and output terminal of a field effect transistor is a source terminal of the transistor, and when a pulse width of the writing voltage pulse is PWLR and a pulse width of the erasing voltage pulse is PWHR, PWLR and PWHR satisfy a relationship of PWLR&#x3c;PWHR.

Method for driving nonvolatile memory element, and nonvolatile memory device having a variable resistance element

A driving method for driving a variable resistance element and a nonvolatile memory device, which achieves stable storage operation. In a low resistance write process, a low resistance writing voltage pulse having the negative polarity is applied once to a variable resistance layer included in a variable resistance element while in a high resistance write process, a high resistance writing voltage pulse having the positive polarity is applied more than twice to the same variable resistance layer. Here, when a voltage value of one of the high resistance writing voltage pulses is VHand a voltage value of the other high resistance writing voltage pulse applied subsequently is VH, VH&#x3e;VHis satisfied.

Method for driving variable resistance element, and nonvolatile memory device

Provided is a method for reading data from a variable resistance nonvolatile storage element, where the operation for reading data is less susceptible to a fluctuation phenomenon of resistance values in reading the data. The method includes: detecting a current value Ithat flows through the nonvolatile storage element that can be in a low resistance state RL and a high resistance state RH, with application of a fixed voltage; and determining that (i) the nonvolatile storage element is in a high resistance state when the current value Idetected in the detecting is smaller than a current reference level Iref, and (ii) the nonvolatile storage element is in a low resistance state when the current value Idetected in the detecting is larger than the reference level Iref, the current reference level Iref being defined by (IRL+IRH)/2&#x3c;Iref&#x3c;IRL.

Method for reading data from nonvolatile storage element, and nonvolatile storage device

A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first variable resistance layer. When viewed in a direction perpendicular to the major surface of the second variable resistance layer, an outline of the second variable resistance layer is located inwardly of the outline of any one of the second electrode layer and the first variable resistance layer, and an outline of a face of the second variable resistance layer, the face being in contact with the first variable resistance layer is located inwardly of an outline of a face of the first variable resistance layer, the face being in contact with the second variable resistance layer.

Variable resistance nonvolatile memory element and method of manufacturing the same

A method of driving a nonvolatile memory element including a variable resistance element having a state reversibly changing between low and high resistance states by an applied electrical signal and a transistor serially connected to the variable resistance element. The method including: setting the variable resistance element to the low resistance state by applying a first gate voltage to a gate of the transistor and applying a first write voltage negative with respect to a first electrode; and changing a resistance value of the transistor obtained in a low-resistance write operation, when a value of current passing through the variable resistance element in the setting of the low resistance state or a resistance value of the nonvolatile memory element in the case where the variable resistance element is in the low resistance state is outside a predetermined range.

Method of driving nonvolatile memory element and nonvolatile memory device

In a nonvolatile memory element, when a voltage value of an electric pulse has a relationship of V2&#x3e;V1&#x3e;0 V&#x3e;V3&#x3e;V4 and a resistance value of a variable resistance layer has a relationship of R3&#x3e;R2&#x3e;R4&#x3e;R1, the resistance value of the variable resistance layer becomes: R2, when the electric pulse having a voltage value of V2 or greater is applied between electrodes; R4, when the electric pulse having a voltage value of V4 or smaller is applied between the electrodes; R3, when the resistance value of the variable resistance layer is R2 and the electric pulse having a voltage value of V3 is applied between the electrodes; and R1, when the resistance value of the variable resistance layer is R4 and the electric pulse having a voltage value of V1 is applied between the electrodes.

Nonvolatile memory element, nonvolatile memory device, and writing method for use in nonvolatile memory element

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Kyoto, Japan

Takeshi Takagi