Tdk Corporation

Hokkaido University

Takeshi Shibahara

Kumiko Yamazaki

Yuki Nagamine

Junichi Yamazaki

Toshihiro Iguchi

Yoshitomo Tanaka

Yuji Umeda

Masahide Ishizuya

Yuji Masubuchi

Shinichi Kikkawa

To provide a multilayer electronic component of which a reliability is not compromised and also a crack is suppressed from forming even when the multilayer electronic component is made thinner. A multilayer electronic component including an element body in which at least one dielectric layer and at least one internal electrode layer are stacked in an alternating manner, wherein a thickness variation of the at least one internal electrode layer is larger than a thickness variation of the at least one dielectric layer.

Multilayer electronic component with alternating dielectric and internal electrode layers

A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700&#xb0; C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABON-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

Thin film capacitor and electronic circuit board

A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula ABONwherein &#x3b1; is larger than zero and 0.300 or less, x+&#x3b1; is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element

To provide a dielectric porcelain composition and an electronic component that demonstrate ferroelectricity. A dielectric porcelain composition that is characterized by having a perovskite-type oxynitride as a principal component and by including a polycrystalline body that demonstrates ferroelectricity.

Dielectric porcelain composition and electronic component

A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein 'A' is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, 'B' is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

Oxynitride thin film and capacitance element

The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of ABON(a+b+o+n=5), wherein said 'A' is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said 'B' is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

Growing community of inventors

Tokyo, Japan

Takeshi Shibahara