Hitachi, Ltd.

Hiatchi, Ltd.

Takeshi Satou

Takeo Shiba

Toshiki Kaneko

Kikuo Ono

Hiroshi Fukuda

Kazuo Takeda

Makoto Ohkura

Etsuko Nishimura

Kenichi Onisawa

Toshihiko Itoga

Tetsuro Minemura

Masakazu Saito

Kenichi Chahara

Katsunori Nakajima

Jun Gotou

Takuya Takahashi

Hajime Ikeda

Tomoya Katou

To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Semiconductor thin film and process for production thereof

This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, this invention provides a thin film transistor substrate where the area occupied by a storage capacitor in each pixel is reduced to raise the aperture ratio of the display unit. One aspect of this invention provides a manufacturing method characterized in that the impurity regions of both high voltage thin film transistors and high performance thin film transistors which differ in the thickness of gate insulation are formed by implanting a dopant through the same two-layered film. Another aspect of this invention reduces the area occupied by the drive circuit in the display unit by utilizing an extension of one layer of the insulation film included in each thin film transistor.

Manufacturing method of thin film transistor substrate

In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost, 6&times;10 &OHgr;cm.

Active matrix type liquid crystal display device having chromium alloy connecting portions which are other than the material of the data line or gate line

A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo&mdash;W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.

Thin film transistor substrate and process for producing the same

In an active matrix type liquid crystal display device, at least material of one element, forming the connecting portion between signal transfer lines related to the scan lines and the data signal lines of the device, is an alloy of at least a chemical element selected from the group consisting of Nb, Mo, Ta, and W, with Cr, the scan lines and means for generating scan pulses are connected to each other via a first opening formed in an insulating film, the data signal lines and the means for generating image data are connected to each other via a second opening formed in an insulating film, a polycrystalline thin film, which is connected to the means for generating scan pulses, is inserted into the first opening, and a polycrystalline thin film, which is connected to the means for generating image data, is inserted into the second opening, and the polycrystalline thin film is composed of indium tin oxide, which is made of mainly indium oxide and added tin oxide, having a specific resistance of, at the utmost, 6&times;10,&OHgr;cm.

Active matrix type liquid crystal display device having chromium alloy connecting portions at pixel electrode or near driving circuit terminals

Growing community of inventors

Kokubunji, Japan

Takeshi Satou