Shin-etsu Chemical Co., Ltd.

Takeshi Sasami

Jun Hatakeyama

Koji Hasegawa

Masaki Ohashi

Yuji Harada

Yuuki Suka

Takeshi Kinsho

Masayoshi Sagehashi

Takeru Watanabe

Satoshi Watanabe

Youichi Ohsawa

Tomohiro Kobayashi

Kenji Yamada

Taku Morisawa

The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance. 

Resist composition and patterning process

A pattern having a good balance of sensitivity, resolution and LWR is formed by providing a resist film comprising a base resin comprising recurring units having a C-Ctertiary alkoxy or alkoxycarbonyl group as an acid labile group and recurring units capable of generating a backbone-bound acid upon exposure, exposing the resist film to radiation, optionally post-exposure baking the resist film at a low temperature of 30-70&#xb0; C., and developing the film.

Patterning process

A resist composition comprising a base resin comprising recurring units having an acid labile group, and a metal salt of sulfonic acid exhibits a high sensitivity and high resolution, and forms a pattern of satisfactory profile with minimal LWR or improved CDU when processed by lithography.

Resist composition, patterning process, and barium salt

A resist composition comprising a base polymer and a compound containing an iodized benzene ring and an aromatic ring-containing group having a phenolic hydroxyl group is improved in sensitivity, LWR and CDU.

A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of &#x3b1;-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

Resist composition, patterning process, and barium, cesium and cerium salts

A fluorinated ester monomer is provided having formula (1) wherein Ris H, CHor CF, Rand Rare H or a monovalent hydrocarbon group, or Rand Rforms a hydrocarbon ring, Ris a monovalent hydrocarbon group, and k is 0 or 1. A polymer obtained from the monomer has transparency to radiation with a wavelength of up to 200 nm and appropriate alkaline hydrolysis, is constructed such that any of water repellency, water slip and surface segregation may be adjusted by a choice of its structure, and is useful in forming ArF immersion lithography materials. 

Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid

A fluorinated monomer has formula (1) wherein Ris H, F, methyl or trifluoromethyl, Rand Rare H or a monovalent hydrocarbon group, Rto Reach are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and kis 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition. 

Fluorinated monomer, polymer, resist composition, and patterning process

A polymer having a partial structure &#x2014;C(CF)OH in recurring units is used as an additive to formulate a resist composition. A photoresist film formed from the resist composition has sufficient barrier performance against water to prevent any resist components from being leached in water and thus minimize any change of pattern profile.

A chemically amplified positive resist composition comprising (A) a triarylsulfonium salt of 2,3,3,3-tetrafluoro-2-(1,1,2,2,3,3,3-heptafluoropropoxy)propionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.

Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process

A polymer comprising recurring units of formula (1) and having a solubility in alkaline developer which increases under the action of an alkaline developer is provided. The polymer has transparency to radiation of up to 200 nm and improved water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer to formulate a resist composition. Ris H, F, methyl, or trifluoromethyl, Ris a monovalent fluorinated hydrocarbon group, Ais a (n+1)-valent hydrocarbon or fluorinated hydrocarbon group, and n is 1, 2 or 3. 

Growing community of inventors

Joetsu, Japan

Takeshi Sasami