Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Sony Corporation

Takeshi Sakuma

Takashi Shigeoka

Yicheng Li

Kenji Matsumoto

Hiroaki Fujii

Masayuki Kitamura

Hiroshi Sakai

Wataru Okase

Soya Araki

Yasushi Yagi

Hisanori Tsuboi

Takahiro Horiguchi

Hironori Yagi

Eisuke Morisaki

Toshio Takagi

Hirokatsu Kobayashi

Satoshi Hoshina

Ryoichi Teramoto

Kenji Homma

Kiyotaka Ninomiya

Norio Uda

Yuji Kato

Hidetaka Adachi

Shouqian Shao

Keisuke Hasuo

A liquid crystal display device with a front face plate having a first section, a second section, and a third section is disclosed. The first section has a light transmissive section and the second section being a light shielding section. The third section may be arranged between the first section and the second section. The third section has a transmittance value which is lower than that of the first section and higher than that of the second section. A method for forming a front face plate assembly of a liquid crystal display device, which may include a front face plate, is also disclosed.

Liquid crystal display having particular front face plate

A shower head structure disposed in a devicefor processing a semiconductor while supplying processing gas to a processing space S for storing a heated processed substrate W, comprising a shower headhaving a plurality of gas injection holesB for supplying the processing gas and a light introducing rodof a radiation thermometerinserted into at least one of the gas injection holesB.

Shower head structure for processing semiconductor

Detection as to the reproduction expiration time of contents is executed, using the measured time of a system clock managed based on system time data from a base station BS. If the reproduction expiration time of the contents is not exceeded, the contents can be reproduced, whereas if it is exceeded, the contents are not reproduced, and a message 'Expired' is generated and displayed on a display.

Information terminal device

A control section limits the number of times of reproduction of content that is reproduced on a display unit. Thereby, a decrease in value of downloaded content is prevented, and a predetermined condition is provided when the number of times of reproduction of the content is counted up. Thus, the creator of the content is protected against disadvantages, while the user can keep enjoying the reproduction of the content.

Mobile terminal control method and mobile terminal

Process operations are performed for subjecting target substrates respectively to a semiconductor process, while a target substrate is placed on a worktable within a process chamber, and the worktable is heated by a temperature control member to heat the target substrate. The reflection coefficient within the process chamber is changed depending on deposition of a by-product, which is generated during the semiconductor process on the target substrate, within the process chamber. A parameter representing the reflection coefficient within the process chamber is measured, between the first and last ones of the process operations. The set temperature of the worktable used in the semiconductor process is adjusted, based on measured value of the parameter, during process operations performed after measuring the parameter. As a consequence, repeatability of the semiconductor process is improved.

Single wafer processing method and system for processing semiconductor

A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.

Method of cleaning processing chamber of semiconductor processing apparatus

A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Thermal processing system

A heat treatment apparatus achieves a uniform and rapid temperature rise of an object to be processed. A plurality of double-end lamps heat the object to be processed so as to apply a heat treatment process to the object. A plurality of reflectors reflect radiation heat of the double-end lamps toward the object to be processed. Each of the double-end lamps includes a rectilinear light-emitting part and at least two double-end lamps among the plurality of double-end lamps are arranged along a longitudinal direction of the light-emitting part, or each of the double-end lamps includes a rectilinear light-emitting part and the plurality of double-end lamps are arranged so that the light-emitting parts are parallel to each other and positioned in at least two stages.

Heating device, heat treatment apparatus having the heating device and method for controlling heat treatment

A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

Thermal process apparatus for a semiconductor substrate

A higher-temperature heating zone and lower-temperature heating zone are set in a process chamber for a single-substrate-heat-processing apparatus in order to subject a wafer to two processes with different process temperatures. In the higher-temperature heating zone, the wafer is heated as it is placed on a worktable. In the lower-temperature heating zone, the wafer is heated with a smaller heat quantity as it floats above the worktable. In the lower-temperature heating zone, a heat ray reflector for compensating for heat dissipated from the peripheral portion of the wafer is disposed to surround the wafer.

Single-substrate-heat-processing apparatus for semiconductor process

A CVD apparatus includes a process chamber connected to a process chamber through a connection path. A window made of a light transmission material is disposed in a wall that defines the excitation chamber. A light source is disposed outside the excitation chamber to face the window. The light source irradiates a flow of a process gas with light through the window, thereby exciting the process gas. A surface purge system is arranged to supply a purge gas along the inner surface of the window. The surface purge system has a purge gas port open to the excitation chamber.

Photo-excited gas processing apparatus for semiconductor process

Temperature measuring method, temperature control method and processing apparatus

A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000&deg; C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.

Thermal treatment method and apparatus

A quartz window decreases an amount of absorption of heat from a heat source while maintaining a pressure difference between the pressure inside a process chamber and an atmospheric pressure. The process chamber defines a process space for processing an object to be processes. A placement stage is provided in the process chamber so as to place the object to be processed thereon. A gas supply part which supplies to the process chamber a process gas for processing the object to be processed. The quartz window is provided as a part of the process chamber so that the quartz window is opposite to the object to be processed placed on the placement stage. A heating unit has a heat radiation lamp provided on an opposite side of the process chamber with respect to the light-transmitting window. The quartz window constitutes a convex lens part which is formed on a periphery of the quartz window and protrudes into the process space.

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Kanagawa, Japan

Takeshi Sakuma