Renesas Technology Corp.

Renesas Electronics Corporation

Takeshi Otani

Toshiyuki Hata

Ichio Shimizu

Hiroyuki Takahashi

Yukihiro Satou

Takamitsu Kanazawa

The semiconductor device is high in both heat dissipating property and connection reliability in mounting. The semiconductor device includes a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

Semiconductor device, a method of manufacturing the same and an electronic device

A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

Semiconductor device having a sealing body and partially exposed conductors

A semiconductor device manufacturing method in which a semiconductor chip is connected to first and second lead frames. Source and gate electrodes extending over a first main surface of the semiconductor chip are connected to first electrode plates of the first lead frame and a drain electrode on the second main surface of the semiconductor chip, opposite to the first main surface, is connected to a drain electrode plate of the second lead frame. A sealing body is formed to cover the semiconductor chip and lead frames, while leaving the top surface of the drain electrode plate exposed with respect to the sealing body. Unnecessary portions of the first and second lead frames are cut off and surface mounting terminals are formed from the portions of the first and second electrode plates projecting from the sealing body.

Manufacturing method of semiconductor device with surface mounting terminals

A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

Semiconductor device with surface mounting terminals

A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G, a source lead S, and a drain lead Dare arranged from left to right on the first surface of the package and a drain lead D, a source lead S, and a gate lead Gare arranged from left to right on the second surface. A gap between the source lead Sand the drain lead Dis two times a gap between the gate lead Gand the source lead S, and a gap between the drain lead Dand the source lead Sis two times a gap between the source lead Sand the gate lead G

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Takasaki, Japan

Takeshi Otani