Semiconductor Energy Laboratory Co., Ltd.

Toshiba Lighting & Technology Corporation

Panasonic Corporation

Panasonic Electric Works Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Bjb Gmbh & Co. Kg

Takeshi Osada

Shunpei Yamazaki

Hidekazu Miyairi

Teppei Oguni

Jun Koyama

Keiichi Shimizu

Toshihiko Takeuchi

Shigeru Osawa

Satoshi Watanabe

Takayuki Ikeda

Takanori Matsuzaki

Yoshiyuki Kurokawa

Ryota Tajima

Makoto Sakai

Hirokazu Otake

Toshiya Tanaka

Hitoshi Kawano

Takeshi Hisayasu

Kengo Akimoto

Junya Maruyama

Yutaka Shionoiri

Tomoaki Atsumi

Kazuo Nishi

Masato Ishii

Kuniharu Nomoto

Satoshi Fukano

Hikaru Tamura

Takeshi Saito

Hiroki Nakagawa

Takehisa Sato

Nobumichi Nishihama

Kei Takahashi

Yasuhiro Jinbo

Kazutaka Kuriki

Yuichiro Takahara

Hiroyuki Miyake

Kiyoshi Kato

Toru Takayama

Shinya Sasagawa

Takahiro Kawakami

Takuya Hirohashi

Konami Izumi

Minoru Takahashi

Takahiro Fukutome

Eiji Sugiyama

Ryosuke Watanabe

Masafumi Morisue

Kazuhiko Miyata

Hiroatsu Todoriki

Susumu Okazaki

Hiromichi Nakajima

Toshifumi Masuda

Hajime Kimura

Yasuyuki Arai

Hideomi Suzawa

Hideaki Shishido

Hidetomo Kobayashi

Akihiro Chida

Toshiyuki Isa

Tetsuya Kakehata

Kiyoshi Takahashi

Jun Sasaki

Mayumi Yamaguchi

Takuya Miwa

Mayumi Mikami

Takayuki Inoue

Hiroshi Amano

Wataru Uesugi

Yuko Tachimura

Hiroshi Matsushita

Masahiko Kamata

Karl-Wilhelm Vogt

Kenichi Ito

Kiyotaka Kimura

Masahiro Izumi

Shinichi Kumashiro

Takeya Hirose

Masahiro Toda

Keisuke Ono

Kazuki Tanemura

Kenji Takanashi

Shunsuke Adachi

Ryotaro Matsuda

Naoki Sugishita

Kenji Nezu

Shuichi Katsui

Junichi Kimiya

Masanao Hieda

Hiroshi Takenaga

Shizuka Sakamoto

Hiroyuki Tomisu

Freddi Plikun

Shougo Takahashi

Hiroyuki Watanabe

Tadashi Yamanaka

Fumihiko Masuko

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Semiconductor device and method for manufacturing the same

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode

Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.

Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same

A parameter candidate for a semiconductor element is provided. A data set of measurement data is provided to a parameter extraction portion, and a model parameter is extracted. A first netlist is provided to a circuit simulator, simulation is performed using the first netlist and the model parameter, and a first output result is output. A classification model learns the model parameter and the first output result and classifies the model parameter. A second netlist and a model parameter are provided to the circuit simulator. A variable to be adjusted is supplied to a neural network, an action value function is output, and the variable is updated. The circuit simulator performs simulation using the second netlist and the model parameter. When a second output result to be output does not satisfy conditions, a weight coefficient of the neural network is updated. When the second output result satisfies the conditions, the variable is judged to be the best candidate.

Parameter search method

Semiconductor device including transistors and method for manufacturing the same

A novel semiconductor device or a semiconductor device capable of preventing overcharging is provided. A power receiving portion has a function of generating a signal for canceling a wireless signal transmitted from a power feeding portion when the charging is completed. Specifically, when the remaining battery capacity of the power receiving portion is one hundred percent or higher than or equal to a predetermined reference value, the power receiving portion has a function of generating an electromagnetic wave for canceling an electromagnetic wave transmitted from the power feeding portion. Thus, a magnetic field for canceling a magnetic field formed of the electromagnetic wave transmitted from the power feeding portion is formed, so that overcurrent in the power receiving portion can be prevented.

Semiconductor device, charging method thereof, and electronic device

To provide an inexpensive display device. The display device includes a pixel and an IC chip. The pixel includes a first pixel circuit including a display element and a second pixel circuit including a light-receiving device. The one IC chip includes a control circuit, a data driver circuit, and a read circuit. The first and second pixel circuits are electrically connected to the read circuit. The control circuit has a function of controlling driving of the data driver circuit and the read circuit. The data driver circuit has a function of supplying image data to the first pixel circuit. The read circuit has a function of outputting a monitor signal corresponding to a monitor current when the monitor current flows through the first pixel circuit. The read circuit also has a function of outputting an imaging signal corresponding to imaging data acquired by the second pixel circuit.

Display device

As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

Semiconductor device and manufacturing method thereof

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of high manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Semiconductor device including flip-flop circuit which includes transistors

Growing community of inventors

Isehara, Japan

Takeshi Osada