Agc Inc.

Takeshi Okato

Daijiro Akagi

Takuma Kato

Yusuke Ono

Ryusuke Oishi

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask

A reflective mask blank, which is a binary reflective mask blank, includes, in order: a substrate; a multilayer reflective film configured to reflect EUV light; and a pattern film. The pattern film has a laminated structure including a total of L layers each having a different refractive index where L is a natural number of 2 or more. When an absorption coefficient of an i-th layer in the pattern film from a side opposite to the substrate is defined as k, a thickness of the i-th layer in the pattern film from the side opposite to the substrate is defined as d(nm), a total thickness of the pattern film is defined as d, an exposure wavelength is defined as λ (nm), and Pis defined as 1−exp(−2π/λ*dk), the following formula (1) is satisfied.

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Tokyo, Japan

Takeshi Okato