Denso Corporation

Central Research Institute of Electric Power Industry

Takeshi Okamoto

Hidekazu Tsuchida

Isaho Kamata

Norihiro Hoshino

Yuichiro Tokuda

Shinichiro Miyahara

Hiroyuki Kondo

Shoichi Onda

Yasuhiro Ebihara

Takashi Kanemura

Takahiro Kanda

Ryohei Tanuma

A method and an apparatus for manufacturing a silicon carbide single crystal, and a silicon carbide single crystal ingot, obtaining a silicon carbide single crystal reduced in defects such as threading dislocations, are provided. The method manufactures a silicon carbide single crystal by supplying a raw material gas into a reaction vessel with a seed substrate, and heats the interior to grow a silicon carbide single crystal on the surface of the seed substrate. The method includes growing the silicon carbide single crystal on the seed substrate surface, while controlling the temperature, to perform pair annihilation of threading dislocations or synthesis of the threading dislocations; and a second step of maintaining the temperature inside the reaction vessel in the state of the first predetermined temperature after execution of the first step, to bring the leading ends of the threading dislocations close to the surface of the seed substrate.

Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot

In a silicon carbide single crystal wafer, a dislocation density contained therein is 3500 dislocations/cmor less, and a difference of the dislocation density among a wafer central part, a wafer peripheral part and a wafer intermediate part is less than 50% of an average value thereof.

Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer

A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal wafer

A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0&#xb0; and within 40&#xb0; is set to 300 dislocations/cmor less. Furthermore, a density of the threading dislocations having the angles larger than 40&#xb0; is set to 30 dislocations/cmor less.

Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device

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Kariya, Japan

Takeshi Okamoto