Mitsubishi Electric Corporation

Komatsu Corporation

Inter Nova Medical Co., Ltd.

Takeshi Oi

Seiji Oka

Yoshiko Obiraki

Yasushi Nakayama

Osamu Usui

Tomoki Konda

Shigeru Hasegawa

Akihiko Iwata

Kazuhiro Hatake

Takayoshi Miki

Kazuhiro Tada

Shiori Idaka

Takeshi Tanaka

Satoshi Azuma

Kenjiro Shimada

Yukio Nakashima

Kenji Okamura

Satoshi Ishibashi

Takeshi Horiguchi

Masato Koyama

Shinichi Kinouchi

Hiroshi Nakatake

Masanori Aizawa

Kenji Ohiwa

Akihiro Murahashi

Tomohiro Kobayashi

Ryuta Okuwaki

Shinsuke Idenoue

Kazuyoshi Toya

Atsunori Kikuchi

A control device for a work machine includes a three-dimensional map acquisition unit, a boundary specification unit, and an excavation start point determination unit. The work machine includes a travel body, a swing body supported by the travel body, and work equipment provided to the swing body and having a bucket. The three-dimensional map acquisition unit acquires a three-dimensional map indicating a shape around the work machine. The boundary specification unit specifies a traveling road boundary line in terrain shown by the three-dimensional map. The traveling road boundary line is a boundary line between a traveling road surface on which a transport vehicle is capable of traveling, and an excavation target by the work equipment. The excavation start point determination unit determines a point on the traveling road boundary line or a point above the traveling road boundary line as an excavation start point by the work equipment.

Control device and control method for work machine

An automatic control determination unit determines whether to start automatic dumping control. A dumping control unit generates a first command to rotate a bucket in a dump direction until an inclination of the bucket reaches a predetermined dumping completion angle upon determining to start the automatic dumping control. The dumping control unit generates a second command to rotate a boom in a raising direction during a period until the inclination of the bucket reaches the dumping completion angle from an inclination at the time of start of the automatic dumping control.

Control system and control method

A loading machine includes a swing body, work equipment provided on the swing body, a posture measuring device to measure a posture of the swing body, and a depth detecting device to detect a depth of at least part of a surrounding of the swing body in a detection range. A control device controls the loading machine. The control device includes a posture information acquisition unit that acquires posture information indicating the posture measured, a detection information acquisition unit that acquires depth information indicating the depth detected, a target azimuth direction determination unit, and an output unit. The target azimuth direction determination unit determines a target azimuth direction in swing control based on the posture information and the depth information acquired when the swing body is stopped swinging. The output unit outputs a swing operation signal based on the target azimuth direction.

Control device, loading machine, and control method to determine a target azimuth direction

A work machine comprises: a work implement; a hydraulic cylinder; a hydraulic pump that supplies the hydraulic oil to the hydraulic cylinder via a hydraulic circuit; a relief valve that can set a relief pressure of the hydraulic circuit to either a first set pressure or a second set pressure higher than the first set pressure; a detection unit that detects at least one of a pressure of the hydraulic oil in the hydraulic circuit and a speed of the work implement; and a relief pressure changing unit that changes a relief pressure of the relief valve from the first set pressure to the second set pressure based on a detection value of at least one of the pressure of the hydraulic oil in the hydraulic circuit and the speed of the work implement when the controlled state of the work implement is the excavation state.

Work machine and method for controlling the same

A loading machine includes a swing body and work equipment with a bucket. A control device of the loading machine includes a loading target specifying unit that specifies a position and shape of a loading target, an avoidance position specifying unit, and a movement processing unit. The avoidance position specifying unit specifies an interference avoidance position based on the position and shape of the loading target. The movement processing unit outputs an operation signal to drive only the swing body until the bucket reaches the interference avoidance position from a loading position above the loading target, to cause the bucket to move to the interference avoidance position. The movement processing unit outputs an operation signal to drive the swing body and the work equipment after the bucket has reached the interference avoidance position, to cause the bucket to move to an excavation position above an excavation target.

Loading machine control device and control method

A work machine includes work equipment. A control device of the work machine includes a trajectory generation unit, and an operation signal output unit. The trajectory generation unit generates a target trajectory of the work equipment according to an excavation curve ratio determined in advance. The excavation curve ratio is expressed as a ratio of an excavation depth to an excavation length. The operation signal output unit outputs an operation signal for the work equipment according to the target trajectory.

Work machine, control device, and control method

A composite electrode intracardiac defibrillation catheter includes a first electrode group including at least two first electrodes for detecting an electrophysiological electrical signal of a site or a cell group in a heart chamber, and a second electrode group including at least one second electrode located between an adjacent pair of the at least two first electrodes for causing an electric current by a high-voltage defibrillation electric shock for defibrillation to flow in a contact site in the heart chamber or a contact site in a vein, and a conductive length of a surface of the at least one second electrode in a longitudinal direction of the composite electrode intracardiac defibrillation catheter is longer than a conductive length of each of the at least two first electrodes.

Compound electrode-type intracardiac defibrillation catheter and compound electrode-type intracardiac defibrillation catheter unit

A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region.

Power semiconductor module

A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.

Power semiconductor device

A power semiconductor device with improved productivity, reduced size and reduction of amounting area therefore is provided. In the provided power semiconductor device, an external terminal does not limit an increase in current. The power semiconductor device is sealed with transfer molding resin. In the power semiconductor device, a cylindrical external terminal communication section is arranged on a wiring pattern so as to be substantially perpendicular to the wiring pattern. An external terminal can be inserted and connected to the cylindrical external terminal communication section. The cylindrical external terminal communication section allows the inserted external terminal to be electrically connected to the wiring pattern. A taper is formed at, at least, one end of the cylindrical external terminal communication section, which one end is joined to the wiring pattern.

A power converting apparatus includes a first inverter circuit including a high-voltage first DC voltage source and operated at a low frequency using Si IGBTs having a high withstand voltage exceeding 1000 V and a second inverter circuit including a low-voltage capacitor operated by high-frequency PWM using SiC MOSFETs having a low withstand voltage, wherein an AC side of the first inverter circuit is connected in series to an AC side of the second inverter circuit. The power converting apparatus outputs AC power having a prescribed voltage waveform obtained from the sum of voltages generated by the first and second inverter circuits.

Power converting apparatus

A power converting apparatus includes a main inverter having a high-voltage DC power supply that operates at a low frequency employing SiC MOSFETs having a high withstand voltage exceeding 600 V and a sub-inverter having a low-voltage capacitor that operates through high-frequency PWM employing Si MOSFETs having a low withstand voltage. With AC sides of the main inverter and the sub-inverter connected in series, the power converting apparatus outputs AC power having a prescribed voltage waveform by adding voltages individually generated by the main inverter and the sub-inverter. Specifically, the SiC MOSFETs are used only in the main inverter of which devices are required to have a high withstand voltage and the Si MOSFETs are used in the sub-inverter of which devices may have a relatively low withstand voltage, whereby conduction loss is reduced with an inexpensive circuit configuration.

A power semiconductor device includes a power semiconductor module having cylindrical conductors which are joined to a wiring pattern so as to be substantially perpendicular to the wiring pattern and whose openings are exposed at a surface of transfer molding resin, and an insert case having a ceiling portion and peripheral walls, the ceiling portion being provided with external terminals that are fitted into, and passed through, the ceiling portion, the external terminals having outer-surface-side connecting portions at the outer surface side of the ceiling portion and inner-surface-side connecting portions at the inner surface side of the ceiling portion. The power semiconductor module is set within the insert case such that the inner-surface-side connecting portions of the external terminals are inserted into the cylindrical conductors.

A wiring process between the provided power semiconductor module and the external circuit is simple. In the power semiconductor module, a power semiconductor element and a cylindrical conductor are joined to one surface of a lead frame. An opening of the cylindrical conductor is exposed at a surface of transfer molding resin. Sealing with the transfer molding resin is performed such that terminal portions of the lead frame protrude from peripheral side portions of the transfer molding resin. The cylindrical conductor is conductive with a control circuit. The terminal portions of the lead frame are each conductive with a main circuit.

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Tokyo, Japan

Takeshi Oi