Kabushiki Kaisha Toyota Chuo Kenkyusho

Nippondenso Co., Ltd.

Gc Corporation

Kaisha Toyota Chuo Kenkyusho

Takeshi Ohwaki

Yasunori Taga

Takeshi Morikawa

Ryoji Asahi

Hisayoshi Fujikawa

Shoji Akahane

Keisuke Ikushima

Shin Yamaguchi

Toshihiro Sekiguchi

Koyu Aoki

Makio Iida

Kazuyoshi Tomita

Koji Noda

Kenji Kondo

Yoshihiko Isobe

Makoto Ohkawa

Yuichi Tanaka

Ichiharu Kondo

Hideya Yamadera

Osamu Takenaka

Takao Yoneyama

Hiroshi Tadano

Motofumi Suzuki

Hirofumi Abe

Takahiro Shiga

Testu Kachi

Tomoyuki Koga

The invention relates to a method for bleaching teeth in which a solution of a nitrogen-doped titanium oxide powder is contacted on a surface of the teeth and the surface of the teeth is irradiated to bleach the surface of the teeth-by activating a photocatalytic reaction.

Method for bleaching teeth and bleaching agent for teeth

To eliminate a defect in conventional dental bleaching agent, that light for activating titanium oxide hardly reaches down to the titanium oxide at the teeth surface to be bleached, a dental bleaching agent set consists of two components of which the first component is attached to teeth surface and irradiation of light is followed after the second component is contacted on the teeth surface, the first component consisting of an organic solvent, containing at least one of a titanium oxide, a nitrogen doped titanium oxide, and a titanium oxinitride having photocatalytic activities, and preferably one or more of a metal oxide, a metal salt, and a metal powder, a thickener and water, the second component consisting of a compound that produces hydrogen peroxide in water, a thickener and a carrier.

Dental bleaching agent kit and the method for bleaching teeth

A photocatalytic material, which exhibits photocatalytic activity when exposed to visible light, the material containing Ti&mdash;O&mdash;N containing nitrogen in lattices of titanium oxide crystal.

Photocatalytic material, photocatalyst, photocatalytic article, and method for the preparation thereof

A photocatalytic material having titanium oxide crystals and anions X incorporated therein, which is prepared by at least one of a method comprising substituting anions X for some of the oxygen sites of titanium oxide crystals, a method comprising doping anions X between lattices of a titanium crystal and a method comprising doping grain boundaries of titanium oxide, or a combination of these method. The photocatalytic material has acquired a new energy level formed in a band gap of titanium oxide, which results in its exhibition of a photocatalytic activity by absorbing visible lights. The photocatalytic material can thus exhibit a satisfactory photocatalytic activity under sunlight and also in a room with a fluorescent lamp.

Photocatalytic material and photocatalytic article

A Ti&mdash;O&mdash;N film is formed on an SiO substrate by sputtering. For example, TiO is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti&mdash;O&mdash;N film. With the fabricated TiO crystals, the Ti&mdash;O&mdash;N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti&mdash;Cr&mdash;O&mdash;N film) by sputtering the SiO substrate by use of TiO and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.

Photocatalyst

A ultra-high density memory device utilizing a photoinductive ferromagnetic thin film. A photoinductive ferromagnetic thin film is formed on a GaAs substrate, and a tip is arranged so as to face the photoinductive ferromagnetic thin film. The GaAs substrate is disposed on an xyz scanner, and the three-dimensional positional relationship between the GaAs substrate and the tip is changed by the xyz scanner. Blue light is radiated onto the thin film in order to make the magnetization orientation of molecules uniform. Through application of a relatively high voltage, a relatively large current is caused to flow between the tip and the substrate, so that randomization of the magnetization orientation of molecules of the photoinductive ferromagnetic thin film; i.e., writing operation is carried out. Also, through uniform radiation of circular polarized light onto the GaAs substrate and application of a relatively low voltage, tunneling current is caused to flow between the tip and the substrate, which tunneling current changes in accordance with the magnetization orientation of molecules of the photoinductive ferromagnetic thin film. Through detection of the tunneling current, the magnetization orientation of molecules of the photoinductive ferromagnetic thin film can be detected.

Ultra-high density memory device

Surface treated structure for solder joint

A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.

Semiconductor device equipped with a heat-fusible thin film resistor and

An electrode assembly for a semiconductor device includes a contact layer formed on a semiconductor substrate and consisting mainly of a rare-earth metal or metals, or a silicide thereof, or a mixture thereof, and a diffusion barrier layer formed on the contact layer and consisting mainly of iron or an iron alloy. The assembly is bonded to a mount by a solder layer formed on the diffusion barrier layer and consisting mainly of lead and tin.

Electrode assembly for a semiconductor device

An inorganic glass having high water repellence produced by irradiating and/or implanting ions upon or into a surface of the inorganic glass, the ions are those of at least one element selected from the group consisting of (a) halogen elements selected from F, Cl, and Br, group 3A, 3B, 4A and 5B elements of the International Periodic Table selected from Al, Ti, Y, In and Bi, (b) rare gas elements selected from He, Ne, Ar, Kr and Xe, group 3A, 4A, 1B, 2B, 3B, 4B and 5B elements of the International Periodic Table selected from Sc, Cu, Zn, Ag, Cd, Sn, Sb, Au, Hg, Tl and Pb, alkali metal or alkaline earth metal elements selected from Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr and Ba, and (c) Ce, the dose of th (a), (b) and (c) ions being 5.times.10.sup.14 to 1.times.10.sup.20 ion/cm.sup.2, 5.times.10.sup.14 to 1.times.10.sup.17 ion/cm.sup.2 and 1.times.10.sup.17 to 1.times.10.sup.20 ion/cm.sup.2, respectively.

Water repellant inorganic glass

An anti-blurring optical member for window panes, reflecting mirrors, etc. for use in automobiles, ships and boats, buildings, and so forth, which secures good viewing field by the formation of hydrophilic regions and hydrophobic regions on a visible light transmitting substrate. Both regions are arranged in patterns with a size and interval corresponding to that of water drops.

Anti-blurring optical member

Growing community of inventors

Aichi-gun, Japan

Takeshi Ohwaki