Mitsubishi Denki Kabushiki Kaisha

Takeshi Ohmaru

Gourab Majumdar

Takaaki Shirasawa

Mitsunori Kubo

A first diode part (,B) for sensing junction temperature and a second diode part (,C) for absorbing static electricity that are included in a semiconductor element (,) for electric power are formed within the same substrate together with a semiconductor element part (,A) for electric power. Moreover, the number of a plurality of second diodes (,CD) constituting the second diode part (,C) is equal to the number of a plurality of first diodes (,BD) constituting the first diode part (,B). In addition, a capacitor (,) for reducing the impedance is disposed between the input terminals of a forward direction voltage fall operating amplifying circuit part (,) of a controlling circuit part (,). Here, it is effective to form an LC low pass filter as well by covering a forward path side relay lead part (,A) and a backward path side relay lead part (,B) with one tubular ferrite core.

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Fukuoka, Japan

Takeshi Ohmaru