Hitachi Chemical Company, Ltd.

Takeshi Nojiri

Masato Yoshida

Hiroyuki Tanaka

Seiji Tai

Mitsunori Iwamuro

Seikichi Tanno

Shuichiro Adachi

Naoki Kimura

Keiko Kizawa

Hajime Kakumaru

Kaoru Okaniwa

Hideyasu Tsuiki

Akihiro Orita

Youichi Machii

Tetsuya Sato

Kazuya Satou

Takahiko Kato

Toranosuke Ashizawa

Koichi Kamijima

Ikuo Mukai

Yoshiyuki Horibe

Yoichi Machii

Mariko Shimamura

Shuuichirou Adachi

Takashi Naito

Hiroki Yamamoto

Takuya Aoyagi

Kazuya Sato

Eiji Fujita

Yumiko Wada

Tetsuya Satou

Toru Tanaka

Hiroshi Yamazaki

Keiji Watanabe

Akio Takahashi

Haruo Akahoshi

Takashi Hattori

Yasushi Kurata

Hirotaka Hamamura

Mineo Kawamoto

Masatoshi Morishita

Toshiaki Ishimaru

Mieko Matsumura

Shinji Tsuchikawa

Tooru Tanaka

Ken Sawabe

Akio Nakano

Yoshiaki Kurihara

Fumihiko Ohta

Tsuyoshi Hayasaka

Shuichirou Adachi

The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

P-type diffusion layer forming composition

A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR). In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each Rindependently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming N-type diffusion layer, method of forming N-type diffusion layer, and method of producing photovoltaic cell

The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell

The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.

Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same

The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280&#xb0; C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode.

Paste composition for electrode and photovoltaic cell

The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1.

Element and photovoltaic cell

A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.

The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.

Method for producing photovoltaic cell

The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.

A photosensitive resin composition comprising (a) a compound obtained by reacting a polybasic acid anhydride with the phenolic hydroxyl groups of a novolac-type phenol resin, and (b) a 1,2-quinonediazide compound. The photosensitive resin composition, which comprises component (b) composed of a 1,2-quinonediazide compound in combination with a component (a) obtained by reacting a polybasic acid anhydride with the phenolic hydroxyl groups of a novolac-type phenol resin, exhibits sufficiently high photosensitivity, image contrast, resolution and adhesiveness.

Photosensitive resin composition and photosensitive element

Disclosed are a phosphor pattern which comprises a substrate having unevenness and a phosphor layer formed on the inner surface of a concave portion of the substrate, wherein the phosphor pattern thickness ratio (x)/(y) satisfies a range of 0.1 to 1.5, where when the length from the bottom of the concave portion to the top of a convex portion is L (&mgr;m), (x) is a thickness of the phosphor pattern formed on an uneven wall surface at a position of 0.9&times;L from the bottom of the concave portion toward the top of the convex portion, and (y) is a thickness of the phosphor pattern formed on the uneven wall surface at a position of 0.4&times;L from the bottom of the concave portion toward the top of the convex portion, and processes for preparing the same.

Photosensitive element for preparing a phosphor pattern

A phosphor pattern for a field emission display panel (FED) is provided. The phosphor pattern is formed by a process whichh comprises the steps of: (I) forming (A) a photosensitive resin composition layer containing a phosphor on a substrate to which a conductive layer is formed; (II) selectively irradiating active light to (A) the photosensitive resin composition layer containing a phosphor, for forming a pattern; (III) selectively removing (A) the photosensitive resin composition layer to which active light has been selectively irradiated by development, to form the pattern; and (IV) calcining the pattern to remove an unnecessary portion, to form the phosphor pattern. Also provided ar this process for forming the phosphor pattern, a photosensitive element for a FED and a field emission display panel. In forming the layer on the substrate, the photosensitive resin composition layer can be provided as a layer of a photosensitive element, and the element provided on the substrate such that the layer contacts the substrate.

PROCESS FOR PREPARING PHOSPHOR PATTERN FOR FIELD EMISSION DISPLAY PANEL, PHOTOSENSITIVE ELEMENT FOR FIELD EMISSION DISPLAY PANEL, PHOSPHOR PATTERN FOR FIELD EMISSION DISPLAY PANEL AND FIELD DISPLAY PANEL

FLUORESCENT PATTERN, PROCESS FOR PREPARING THE SAME, ORGANIC ALKALI DEVELOPING SOLUTION FOR FORMING THE SAME, EMULSION DEVELOPING SOLUTION FOR FORMING THE SAME AND BACK PLATE FOR PLASMA DISPLAY USING THE SAME

Growing community of inventors

Tsukuba, Japan

Takeshi Nojiri