Sanyo Electric Co., Ltd.

Takeshi Nakamura

Yusuke Igarashi

Ryosuke Usui

Noriaki Sakamoto

Yoshiyuki Kobayashi

Hideki Mizuhara

Yasunori Inoue

Yasuhiro Kohara

Nobuhisa Takakusaki

Atsuhiro Nishida

Ryosuke Usul

Hiroyuki Watanabe

Kouji Takahashi

Junji Sakamoto

Eiju Maehara

Yukio Okada

Katsumi Ito

A technology is provided for a packaging board adapted to mount a device capable of improving handleability and securing connection reliability. The packaging board includes: a pad electrode formed on a substrate; an insulating layer covering the substrate, having an opening at least in part in an area over the pad electrode; and a joint layer formed on the pad electrode inside the opening. The surface of the joint layer is lower than the top lip of the opening.

Packaging board, semiconductor module, and portable apparatus

A device mounting board for a device to be mounted on, comprising: a substrate; and a laminated film composed of a plurality of insulating layers formed on one side of the substrate. Here, any of the second and subsequent insulating layers from the substrate is a photosolder resist layer containing a cardo type polymer. The photosolder resist layer has a thickness smaller than that of the insulating resin film arranged between the photosolder resist layer and the substrate.

Device mounting board and semiconductor apparatus using the same

A circuit device is made smaller in higher. The circuit device includes a wiring substrate, a first circuit element, and a second circuit element. The circuit substrate includes an insulating resin layer, a wiring layer provided on a main surface of the insulating resin layer, and a wiring layer provided on the other main surface of the insulating resin layer. The wiring layer includes first interconnectors to which the first circuit element connects, and wiring portions. The film thickness of the first interconnector is made thinner than that of the wiring portion. The wiring layer includes second interconnectors and wiring portions. The first interconnectors and the second interconnectors are connected through the medium of conductors.

Circuit device and manufacturing method therefor

An adhesive film is formed on an electrode film, and a coating film is formed thereon. Nickel, chrome, molybdenum, tungsten, aluminum or an alloy of them is used as a constituent material of the adhesive film. Gold, silver, platinum or an alloy of them is used as a constituent material of the coating film.

Manufacturing method for semiconductor device containing stacked semiconductor chips

A method for manufacturing a circuit device, which is suitable for connecting a plurality of laminated wiring layers to each other through an insulating layer, is provided. In a method for manufacturing a hybrid integrated circuit device of the present invention, a first wring layer is formed by laminating a first conductive film on a first insulating layer, and patterning the first conductive film. In the first wiring layer, a first connection part which is protruded in a thickness direction is formed. Moreover, the first wiring layer including the first connection part is covered with a second insulating layer. The second insulating layer is formed of a first resin film and a second resin film. The second resin film contains fewer inorganic fillers than the first resin film. Thus, there is an advantage that a through-hole can be easily formed.

Method for manufacturing circuit device

A circuit device including a multilayer wiring structure having an improved heat radiation performance, and a manufacturing method thereof is provided. A circuit device of the invention includes a first wiring layer and a second wiring layer laminated while interposing a first insulating layer. The first wiring layer is connected to the second wiring layer in a desired position through a connecting portion formed so as to penetrate the first insulating layer. The connecting portion includes a first connecting portion protruding in a thickness direction from the first wiring layer, and a second connecting portion protruding in the thickness direction from the second wiring layer. The first connecting portion and the second connecting portion contact each other at an intermediate portion in the thickness direction of the insulating layer.

Circuit device and manufacturing method thereof

A semiconductor element and a passive element are embedded in an insulating resin film by thermocompression bonding. After formation of a interconnection, a layered film which contains a film insulating between elements and is provided with a recess or penetrated portion is pressure-bonded followed by formation of a member with a high resistance or a high dielectric constant by embedding a material of a member constituting an element such as a resistor and a capacitor in the recess. Furthermore, after formation of the upper layer insulating resin film, a photoimageable solder resist layer containing the cardo type polymer is formed, and interconnection formation and solder electrode formation are performed.

Semiconductor module with high process accuracy, manufacturing method thereof, and semiconductor device therewith

A manufacturing method of a multilayer substrate that suppresses relative displacement of layers and forms interconnecting portions electrically connecting layers having an accurate positioning. A manufacturing method of a multilayer substrate for laminating, via an insulating film, a wiring layer formed by patterning a conductive film comprises providing a positioning hole in a conductive film laminated at the beginning and patterning a second and/or any subsequent wiring layers after identifying a position of an identification section. Interconnecting sections for interconnecting wiring layers are formed using the identification section.

Multilayer substrate manufacturing method

A semiconductor apparatus includes a substrate and elements or semiconductor chips provided on the substrate. The elements are sealed by being brought into contact with a sealing compound. The surface of contact on the elements or the sealing compound is plasma treated. The semiconductor chip is adhesively attached to another semiconductor chip via an adhesive compound. The surface of the semiconductor chip in contact with the adhesive compound is plasma treated.

Semiconductor apparatus

A wiring substrate is provided with an insulating resin film; and first and second conductive films provided on the back side and top side of the insulating resin film, respectively. The wiring substrate includes a via formed to fill a recess provided in the insulating resin film and electrically connecting the top side and back side of the insulating resin film. The via includes a first metal film formed to cover the side wall of the recess, an oxide film formed to cover the first meal film, and a second metal film formed on the metal oxide film.

Wiring substrate and method of fabricating the same

In a manufacturing method of a hybrid integrated circuit deviceaccording to the present invention, a first dummy pattern Dis provided on a first wiring layerA. Furthermore, a second dummy pattern Dis provided on a second wiring layerB. The first dummy pattern Dand the second dummy pattern Dare connected through a connection partwhich penetrates an insulation layer. Hence, heat dissipation through a dummy pattern can be actively performed. In addition, even in the cases where a multi-layered wiring is formed, it is possible to provide a circuit device which can secure a heat dissipation property.

Circuit device with dummy elements

Semiconductor device containing stacked semiconductor chips and manufacturing method thereof

A circuit device which enables easy formation of a connection part that connects wiring layers to each other, and a manufacturing method thereof are provided. In a method for manufacturing a hybrid integrated circuit device of the present invention, a first resin film is formed so as to cover a first wiring layer. Thereafter, a first through-hole is formed, which penetrates the first resin film and exposes the first wiring layer from a bottom thereof. Next, a second resin film is formed so as to fill up the first through-hole. Moreover, a second through-hole is formed in the second resin film buried in the first through-hole, and a connection part is formed.

A circuit device suitable for connecting a plurality of laminated wiring layers to each other through an insulating layer, and a manufacturing method thereof are provided. According to a hybrid integrated circuit device of the present invention and a manufacturing method thereof, a first conductive film is laminated on a first insulating layer, and a first wiring layer is formed by patterning the first conductive film. Next, a second conductive film is laminated on a second insulating layer. Thereafter, by partially removing the second insulating layer and the second conductive film in a desired spot, a connection part for connecting the wiring layers to each other is formed.

A method for fabricating a circuit device includes preparing a laminating sheet comprising a conductive film, insulation resin formed on the surface of the conductive film, and a first conductive path layer formed on the surface of the insulation resin. Semiconductor elements are adhered and fixed on the first conductive path layer. A sealing resin is provided as an overcoat to the first conductive path layer and the semiconductor elements. The method includes forming a second conductive path layer by etching the conductive film into a predetermined pattern and forming an external electrode at predetermined points of the second conductive path layer.

Growing community of inventors

Gunma, Japan

Takeshi Nakamura