Ebara Corporation

Kabushiki Kaisha Toshiba

Astellas Pharma Gmbh

Mitsubishi Electric Corporation

Kotobuki Pharmaceutical Co Ltd

Kabushiki Kaisha Topcon

Yamanouchi Pharmaceutical Company Ltd.

Other

Kowa Company Limited

Gigaphoton Inc.

Kotobuki Pharmaceuticals Co., Ltd.

Gigaphton Inc.

Canon Kabushiki Kaisha

Takeshi Murakami

Nobuharu Noji

Tohru Satake

Masahiro Hatakeyama

Tsutomu Karimata

Mamoru Nakasuji

Kenji Watanabe

Shoji Yoshikawa

Hirosi Sobukawa

Toshifumi Kimba

Yuichiro Yamazaki

Ichirota Nagahama

Shin Oowada

Mutsumi Saito

Kuniaki Horie

Takao Kato

Yuji Araki

Tsutomu Nakada

Norio Kimura

Hiroyuki Shinozaki

Yoshinori Kobayashi

Atsushi Noda

Toru Takagi

Muneki Hamashima

Kazuyoshi Sugihara

Yasuo Yamaguchi

Kouji Kakizaki

Satoshi Mori

Shinji Nagai

Masahiro Inoue

Katsuya Okumura

Akihiro Tanaka

Naoki Matsuda

Hiroyuki Watanabe

Yuka Ishiduka

Akihisa Hongo

Matsutaro Miyamoto

Kimiyuki Shibuya

Minoru Harada

Kenichi Kaku

Seiji Yoshimura

Wataru Kitamura

Naoaki Ogure

Tadaaki Ohgiya

Yota Ito

Takanobu Ishihara

Koichi Yamazaki

Noriyuki Kawano

Nobuhiro Nakamura

Tomohito Ishida

Kiwamu Tsukamoto

Takamitsu Nagai

Kenji Terao

Yoshihiko Naito

Kenichi Suematsu

Ryo Tajima

Keiichi Tohyama

Hiroshi Sobukawa

Hidenao Suzuki

Masahito Abe

Yutaka Tabe

Hiroyuki Ueyama

Yukio Fukunaga

Hiroshi Tomiyama

Ryota Shiraki

Kazuhiro Ikegai

Tatsuya Kohama

Masakazu Imamura

Takehide Hayashi

Eiji Kurosaki

Kayoko Kitta

Fumio Kuriyama

Takashi Sugane

Fumiyoshi Iwasaki

Mitsunao Shibasaki

Kimitoshi Sato

Tatsuhiko Higashiki

Ryoichi Tokimitsu

Mai Murakami

Tatsuya Yamaai

Yasushi Toma

Mika Okumura

Hiroshi Nishimura

Naoto Kihara

Makio Horikawa

Takayuki Suzuki

Shuhei Iwasaki

Atsushi Onishi

Takehiko Ohkawa

Ryoichi Shinjo

Shin-ichi Tsukamoto

Akira Matsuhisa

Yukiko Nishioka

Ichiro Kamiya

Katsutoshi Miyosawa

Junya Ohmori

Tomoaki Kawano

Taichi Kusakabe

Masaru Nakaniwa

In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

Beam bender

Exposure of a gate conductive film covered by an interlayer insulation film in a unit cell portion is reduced when a gate contact region is formed. A method of manufacturing a semiconductor device includes forming a gate conductive film to come in contact with a gate oxide film in a unit cell portion, forming a gate wire to come in contact with the gate oxide film in a termination region, forming a first insulation film on an upper surface of the gate wire in the termination region, subjecting an upper surface of the gate conductive film in the unit cell portion to thermal oxidation with use of the first insulation film as a mask to form a thermal oxide film on the upper surface of the gate conductive film, and forming a second insulation film covering the first insulation film and the thermal oxide film.

Method of manufacturing semiconductor device

An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.

Inspection device

An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.

Specimen observation method and device using secondary emission electron and mirror electron detection

An inspection apparatus capable of facilitating reduction in cost of the apparatus is provided. The inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held on a movable stage in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The inspection apparatus further includes: a linear motor that drives the movable stage; and a Helmholtz coil that causes a magnetic field for canceling a magnetic field caused by the linear motor when the movable stage is driven.

Inspection apparatus

A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Testing apparatus using charged particles and device manufacturing method using the testing apparatus

An inspection apparatus by an electron beam comprises: an electron-optical devicehaving an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical systems; a stage systemfor holding and moving the object relative to the electron-optical system; a mini-environment chamberfor supplying a clean gas to the object to prevent dust from contacting the object; a working chamberfor accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambersdisposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loaderfor transferring the object to the stage system through the loading chambers.

Inspection system by charged particle beam and method of manufacturing devices using the system

In accordance with an embodiment, an analysis apparatus includes a secondary electron optical system, at least one detector, and a composition analysis unit. The secondary electron optical system includes a charged particle beam source and a lens. The charged particle beam source generates a charged particle beam and irradiates a sample with it. The lens controls a focal position and a trajectory of the charged particle beam using an electric field or a magnetic field. The detector detects a characteristic X-ray from the sample. The composition analysis unit analyzes a composition of a material constituting the sample from the detected characteristic X-ray. Each detector is arranged in such a manner that at least part of a detection surface thereof is placed on the same plane as an exit surface of the secondary electron optical system, or placed on the charged particle beam side of the same plane.

Analysis apparatus and analysis method

The electron beam apparatus is provided with a stage for mounting a sample thereon, a primary optical system for generating an electron beam having an irradiation area and irradiating the electron beam onto the sample, a secondary optical system for detecting electrons which have been generated through the irradiation of the electron beam onto the sample and have acquired structural information of the sample and acquiring an image of the sample about a viewing area and an irradiation area changing section for changing the position of the irradiation area with respect to the viewing area.

Electron beam apparatus and sample observation method using the same

An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage () on which a sample () is placed is disposed inside a vacuum chamber () that can be evacuated to vacuum, and a dust collecting electrode () is disposed to surround a periphery of the sample (). The dust collecting electrode () is applied with a voltage having the same polarity as a voltage applied to the sample () and an absolute value that is the same or larger than an absolute value of the voltage. Thus, because dust or particles such as particles adhere to the dust collecting electrode (), adhesion of the dust or particles to the sample surface can be reduced. Instead of using the dust collecting electrode, it is possible to form a recess on a wall of the vacuum chamber containing the stage, or to dispose on the wall a metal plate having a mesh structure to which a predetermined voltage is applied. In addition, adhesion of dust or particles can be further reduced by disposing a gap control plate () having a through hole () at the center above the sample () and the dust collecting electrode ().

Electro-optical inspection apparatus and method with dust or particle collection function

Substantially optically pure (S)-trans-{4-[({2-[({1-[3,5-bis(trifluoromethyl)phenyl]ethyl}{5-[2-(methylsulfonyl)ethoxy]pyrimidin-2-yl}amino)methyl]-4-(trifluoromethyl)phenyl}(ethyl)amino)methyl]cyclohexyl}acetic acid, or a salt thereof, or a solvate thereof, which has actions of reducing amount of PCSK9 protein and increasing amount of LDL receptor.

Optically active dibenzylamine derivative, and method for preparing thereof

Growing community of inventors

Tokyo, Japan

Takeshi Murakami