Ablic Inc.

Takeshi Morita

Kazuhiro Tsumura

Masaru Akino

Shinjiro Kato

Yukihiro Imura

In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the N-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.

Method of manufacturing a semiconductor device

A semiconductor device () includes: a substrate (); a wiring () formed above the substrate (); a titanium nitride film () formed on the wiring (); an oxide film () formed on the titanium nitride film (); a silicon nitride film () formed on the oxide film (); and a pad portion () exposing the wiring (), and formed at a place where a first opening portion () formed in the silicon nitride film () and a second opening portion () formed in the titanium nitride film () overlap with each other in plan view, and being inside a third opening portion () formed in the oxide film () in plan view, wherein the silicon nitride film () is formed on top of and in contact with the titanium nitride film () inside the third opening portion () in plan view.

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

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Chiba, Japan

Takeshi Morita