Kabushiki Kaisha Toyota Chuo Kenkyusho

Toyota Jidosha Kabushiki Kaisha

Gc Corporation

Kaisha Toyota Chuo Kenkyusho

Takeshi Morikawa

Yutaka Nonomura

Yasunori Taga

Kouji Tsukada

Takeshi Ohwaki

Ryoji Asahi

Masayuki Okuwa

Nobuyoshi Sugitani

Yoshiteru Omura

Shoji Akahane

Masaharu Takeuchi

Keisuke Ikushima

Shin Yamaguchi

Toshihiro Sekiguchi

Koyu Aoki

Tomiko Mori

Yoshiaki Fukushima

Akihiko Suda

Kimitoshi Tsuji

Hiromitsu Tanaka

Yasuhiko Takeda

Kenji Harada

Jiro Sakata

Yuji Nishibe

Hiroaki Wakayama

Tadashi Nakamura

Takashi Ozaki

Hideya Yamadera

Naohiko Kato

Tsutomu Kajino

Masahito Shiozawa

Sanae Tokumitsu

Nobuo Kurata

Kazuyoshi Kawaguchi

Shu Saeki

Shunsuke Sato

Takahiro Shiga

Shintaro Mizuno

An electrode set for chemical reaction includes a substrate, and electrodes for reduction and oxidation reactions alternately arranged on the same surface of the substrate.

Electrodes for chemical reaction, and cell for chemical reaction and chemical reactor using the same

Iron compound particles comprise a &#x3b2;-FeOOH crystal phase and a metal element other than Fe with which the &#x3b2;-FeOOH crystal phase is doped, wherein the metal element other than Fe is at least one metal element selected from the group consisting of elements of Al as well as 3d and 4d transition metals belonging to periodic table Groups 4 to 12 other than Fe, an atomic ratio of the metal element other than Fe to the Fe element (metal element other than Fe/Fe element) is 0.001 to 0.5, and the iron compound particles satisfy at least one of the following requirements (A) and (B):

Iron compound particles, method for producing the iron compound particles, and oxidation catalyst using the iron compound particles

To provide a photocatalyst having high selectivity and carrying out a reductive reaction with light having a longer wavelength. A photocatalyst has a structure in which a semiconductor and a substrate are joined, in which the substrate causes a catalytic reaction by transfer to the substrate of excited electrons, which are generated by applying light to the semiconductor.

Photocatalyst and reducing catalyst using the same

The invention relates to a method for bleaching teeth in which a solution of a nitrogen-doped titanium oxide powder is contacted on a surface of the teeth and the surface of the teeth is irradiated to bleach the surface of the teeth-by activating a photocatalytic reaction.

Method for bleaching teeth and bleaching agent for teeth

To eliminate a defect in conventional dental bleaching agent, that light for activating titanium oxide hardly reaches down to the titanium oxide at the teeth surface to be bleached, a dental bleaching agent set consists of two components of which the first component is attached to teeth surface and irradiation of light is followed after the second component is contacted on the teeth surface, the first component consisting of an organic solvent, containing at least one of a titanium oxide, a nitrogen doped titanium oxide, and a titanium oxinitride having photocatalytic activities, and preferably one or more of a metal oxide, a metal salt, and a metal powder, a thickener and water, the second component consisting of a compound that produces hydrogen peroxide in water, a thickener and a carrier.

Dental bleaching agent kit and the method for bleaching teeth

A photocatalytic material, which exhibits photocatalytic activity when exposed to visible light, the material containing Ti&mdash;O&mdash;N containing nitrogen in lattices of titanium oxide crystal.

Photocatalytic material, photocatalyst, photocatalytic article, and method for the preparation thereof

A photocatalytic material having titanium oxide crystals and anions X incorporated therein, which is prepared by at least one of a method comprising substituting anions X for some of the oxygen sites of titanium oxide crystals, a method comprising doping anions X between lattices of a titanium crystal and a method comprising doping grain boundaries of titanium oxide, or a combination of these method. The photocatalytic material has acquired a new energy level formed in a band gap of titanium oxide, which results in its exhibition of a photocatalytic activity by absorbing visible lights. The photocatalytic material can thus exhibit a satisfactory photocatalytic activity under sunlight and also in a room with a fluorescent lamp.

Photocatalytic material and photocatalytic article

A Ti&mdash;O&mdash;N film is formed on an SiO substrate by sputtering. For example, TiO is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti&mdash;O&mdash;N film. With the fabricated TiO crystals, the Ti&mdash;O&mdash;N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti&mdash;Cr&mdash;O&mdash;N film) by sputtering the SiO substrate by use of TiO and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.

Photocatalyst

The invention features a photocatalytic body including: a porous medium formed on a substrate ; and photocatalytic material supported on the porous medium. Supporting the photocatalytic material on the porous medium enables enhancement of its catalytic activity.

Photocatalytic susbstance

A magnetic sensor element 1 includes a substrate 10, a conductive layer 12 of a conductive material, and a magnetic layer 11 of a magnetic material, which encloses the conductive layer 12. AC is applied to the element from a drive power source 50, and a detector 60 detects an impedance change due to an external magnetic field. The magnetic layer 11 is bestowed with magnetic anisotropy in a direction orthogonal to the direction of energization of the element 1. With the provision of the conductive layer 12 of conductive material and also with magnetic anisotropy imparted to the magnetic layer 1, the element 1 may be made a low resistivity element. A reactance change and a resistance change of the element due to an external magnetic field change, thus can be effectively detected in drive frequencies two orders of magnitude lower than in the case of a prior art magnetic sensor element. The magnetic anisotropy of the magnetic layer 11 is controlled to prevent magnetic field detection dynamic range variations with drive frequency.

Multilayered magnetic sensor having conductive layer within megnetic

the present invention provides a force transducer having high compression fracture strength and high detection sensitivity, thus satisfying both detection precision and reliability, and also a method of fabricating such a force transducer. The force transducer is so constructed that a compression force is transferred via a pressure transfer block to narrow strain gages, which protrude from the surface of a silicon substrate and provide a small pressure-bearing area. Therefore, large compression strains act on the strain gages and thus the detection sensitivity is increased. When the compression force exceeds a predetermined value, the pressure transfer block comes into contact with the surface of the silicon crystal, thus improving the fracture strength of the strain gages. These narrow, protruding strain gages can be fabricated easily by a single mesa etching process.

Force transducer and method of fabrication thereof

A vibration-sensing device (10) with high sensitivity includes a torsion bar (16) fixed on both ends thereof to a frame, a tuning fork-shaped vibrating member (12) joined with and supported by the torsion bar (16), and first and second torsion vibrating bodies (14,15) symmetrically projected from the torsion bar (16). The torsion bar (16), the tuning fork-shaped vibrating member (12), and the torsion vibrating bodies (14,15) constitute a torsion vibrating system. The application of an angular velocity to the vibration-sensing device (10) under the condition of plane vibrations of first and second vibrating tines (12a, 12b) of the first tuning fork-shaped vibrating member (12) along an X axis generates Coriolis forces to drive torsion vibration of the first tuning fork-shaped vibrating member (12) round the torsion bar (16), thereby driving torsion vibration corresponding to the angular velocity in the torsion vibrating system. The torsion vibration is amplified by the first and second torsion vibrating bodies (14,15) and detected by torsion vibration-detecting piezoelectric elements (20a,20b) attached to the torsion vibrating bodies (14,15). An angular velocity sensor using the vibration-sensing device, and a method of adjusting the sensitivity of the device are also provided.

Vibration-sensing device method of adjusting the same and angular

A vibration-sensing gyro composed of a light alloy such as duralumin includes a base and a first pair of tines projecting parallel to each other from the base. Piezoelectric elements are mounted on the root of the side faces of the first pair of tines to excite the first pair of tines along an X axis. The vibrations of the first pair of tines along the X axis are then propagated to a second pair of tines to vibrate the second pair of tines along the X axis. Piezoelectric elements are mounted on the root of the upper and the lower faces of the second pair of tines to detect vibrations of the second pair of tines along an Y axis. When the second pair of tines receives the Coriolis force based on an angular velocity .omega. around a Z axis and vibrates along the Y axis, the vibrations along the Y axis are detected as electric signals (alternating current voltages) by piezoelectric effects of the piezoelectric elements.

Vibration-sensing gyro

The invention provides a vibration-sensing gyro, where resonance frequencies of tines are adjusted adequately in a simple manner. A vibration-sensing gyro (10) of the invention is made of a light alloy plate like duralumin and includes a first tine (14) and a second tine (16) disposed parallel to each other and projecting from a base (12). When the first tine (14) has a length l1, a width w1 along the X axis, and a thickness t1 and the second tine (16) has a length l2, a width w2 along the X axis, and a thickness t2 (=t1), the first tine (14) and the second tine (16) hold the relationship of l2/.sqroot.t2=l1/.sqroot.w1. In other words, the tines (14,16) and the base (12) are manufactured to satisfy this relationship. Such definition of the dimensions makes a resonance frequency fx1 of the first tine along the X axis coincide with a resonance frequency fy 2 of the second tine 16 along the Y axis.

Vibration-sensing element and vibration-sensing gyro using the same

A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of &lt;110&gt; of the crystal or a direction equivalent to the direction of &lt;110&gt;; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.

Growing community of inventors

Seto, Japan

Takeshi Morikawa