Seiko Epson Corporation

Takeshi Mori

Shogo Inaba

Akira Sato

Toru Watanabe

Shuhei Harada

Tetsuya Takamoto

A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

MEMS device and fabrication method thereof

An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

Electronic device and method for manufacturing thereof

A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

MEMS device having a movable electrode

A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Resonator including a microelectromechanical system structure with first and second structures of silicon layers

A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.

MEMS switch and manufacturing method thereof

A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

MEMS resonator and manufacturing method of the same

The tubehas a hollow portionand a wall portion. The tubehas mutually contacting wall portionsthat become compressed in such a way that the wall portioncomes into mutual contact in the hollow portionthrough compression by a compressing mechanism, and is designed so that the mutually contacting wall portionscome into mutual contact, and the mutually contacting wall portionsrecover upon release of the compressing mechanism. The mutually contacting wall portionshave readily contacting portions Cthat come into mutual contact at a certain level of compressing force, and contact resistant portions Sthat come into mutual contact only at a higher level of compressing force than in the readily contacting portions C. The thickness of the wall portionaround the hollow portionvaries so that the readily contacting portions Care subjected to greater force than the contact resistant portions S

Tube and tube pump

A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Growing community of inventors

Matsumoto, Japan

Takeshi Mori