The University of Tokyo

Ihi Corporation

Sony Corporation

Kyocera Corporation

Takeshi Momose

Yukihiro Shimogaki

Takeshi Nakamura

Yasuyuki Fukushima

Yuichi Funato

Kohei Shima

Kozue Hotozuka

Hidetoshi Sugiura

Noboru Sato

Takahito Tanibuchi

Masato Ishizaki

Hayato Kubo

Momoko Deura

Yasutomo Tanaka

Kozue Akazaki

Kenji Fuchigami

Kazuma Akikubo

A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film including Ti, Al and N. A first Al ratio and a second Al ratio are 0.7 or more. The first Al ratio is Al/(Al+Ti) at a point located 0.1 mm away from the cutting edge, and the second Al ratio is Al/(Al+Ti) at a point located 0.2 mm away from the cutting edge in the first surface. The second Al ratio is larger than the first Al ratio.

Coated tool

A coated tool in a non-limiting embodiment of the present disclosure includes a base and a coating film located on the base. The coated tool includes a first surface, a second surface adjacent to the first surface, and a cutting edge located on at least a part of a ridge part of the first surface and the second surface. The coating film includes an AlTiN film. The coating film has a first compressive stress σin a first direction which is parallel to a surface of the base and intersects with the cutting edge at an angle of 90°, and a second compressive stress σin a second direction which intersects with the first direction at an angle of 90°. The first compressive stress σis different from the second compressive stress σ

Provided is a method of producing a silicon compound material, including the steps of: storing a silicon carbide preform in a reaction furnace; supplying a raw material gas containing methyltrichlorosilane to the reaction furnace to infiltrate the preform with silicon carbide; and controlling and reducing a temperature of a gas discharged from the reaction furnace at a predetermined rate to subject the gas to continuous thermal history, to thereby decrease generation of a liquid or solid by-product derived from the gas.

Method of producing a silicon compound material and apparatus for producing a silicon compound material

A mixed gas containing a precursor gas, an additive gas and a carrier gas is supplied to a preform stored in an electric furnace, and silicon carbide is deposited by chemical vapor deposition or chemical vapor phase impregnation to form a film. The preform includes multiple fiber bundles, and the fiber bundles include multiple fibers. This heat-resistant composite material includes a ceramic fiber preform impregnated with silicon carbide, and producing the composite material involves a step in which silicon carbide is deposited between the fibers to integrate the fibers which configure the fiber bundles, and a step in which silicon carbide is deposited between the fiber bundles to integrate the fiber bundles. Hereby, uniformity of embedding and growth rate of the silicon carbide film are both attained.

Heat-resistant composite material production method and production device

In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preformaccommodated in a reaction furnacefor film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnaceis used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Method for manufacturing heat-resistant composite material

An in-vehicle apparatus includes: a main body part; an analog input terminal; a video processing circuit; an audio processing circuit; an input control circuit; and a microcomputer.

In-vehicle apparatus and in-vehicle apparatus system

The present invention provides a technique for easily achieving a resume function for moving image content stored in one file in a removable recording medium. According to the present invention, a removable disc (Di) in which moving image content stored in one file and another content are stored is played back, and, when playback of MPEG4 moving image file in the disc (Di) that is played back is stopped and the disc (Di) is removed, the file size, the file name, and the address of the MPEG4 moving image file are stored in a RAM. When the disc (Di) is loaded again and the MPEG4 moving image file is played back, if it is determined that the disc (Di) is identical to the removed disc by reading the file size and the file name stored in the RAM, playback of the MPEG4 moving image file is resumed on the basis of the address stored in the RAM

Playback apparatus and playback method

In order to provide an audio device capable of making more effective use of non-compressed audio data and compressed audio data, according to the present invention, compressed audio data as computer data is stored in a data track in a Mixed-mode CD. By allowing a playback apparatus to recognize the presence of the compressed audio data, both the compressed audio data and non-compressed audio data stored in a CD-DA track are played back.

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Tokyo, Japan

Takeshi Momose