Mitsubishi Denki Kabushiki Kaisha

Takeshi Matsunuma

Moriaki Akazawa

Katsunobu Hori

Kenichiro Shiozawa

A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.

Semiconductor device with capacitor and method of manufacturing thereof

A first photoresist film with low sensitivity and a second photoresist film with high sensitivity are stacked on an interlayer insulating film formed on a semiconductor substrate (FIGS. A to C). The first and second photoresist films and are exposed simultaneously using a photolithography mask having a first transmittance part corresponding to the contact hole and a second transmittance part corresponding to the upper wiring (FIG. D). They are developed so that the difference in depth between the contact hole and the upper wiring is three-dimensionally reflected in the first and second photoresist films and (FIG. E). Etching is carried out by using them as a mask to form the contact hole and the upper wiring.

Growing community of inventors

Hyogo, Japan

Takeshi Matsunuma