Sony Semiconductor Solutions Corporation

Sony Corporation

Takeshi Matsunuma

Toshifumi Wakano

Yusuke Tanaka

Takashi Nagano

Motonari Honda

Yoshihisa Kagawa

Rena Suzuki

Naoki Jyo

Ryoji Suzuki

Yoshiaki Masuda

Shinji Miyazawa

Keisuke Hatano

Yasunori Tsukuda

Shohei Shimada

Terumi Kambe

Yannick Baines

Provided is a method for manufacturing a light detection device capable of suppressing optical color mixing while improving sensitivity. On a substrate in which a plurality of photoelectric conversion units is formed, anisotropic etching is performed from one surface side of the substrate to form a plurality of openings arranged in a lattice shape at predetermined intervals on the substrate to surround each photoelectric conversion unit. Subsequently, isotropic etching is performed from one surface side of the substrate to connect adjacent openings to each other, to form a lattice-shaped trench part on the substrate to surround each photoelectric conversion unit.

Method for manufacturing light detection device, light detection device, and electronic device

Optical detection devices wherein a bias voltage of a photoelectric conversion element is accurately adjustable regardless of a quantity of incident light are disclosed. In one example, an optical detection device includes a first pixel that has a photoelectric conversion element for generating a carrier by photoelectric conversion, a second pixel that has a carrier generation unit for generating a carrier by a cause other than photoelectric conversion, and a control circuit that controls a bias voltage applied to each of the photoelectric conversion element and the carrier generation unit, according to the carrier generated by the second pixel. The photoelectric conversion element includes a first photoelectric conversion region and a first pinning film disposed at a position in contact with the first photoelectric conversion region. The carrier generation unit includes a second photoelectric conversion region, and includes a second pinning film that is partially removed.

Optical detection device and electronic apparatus

There is provided a solid-state image-capturing element capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.

Solid-state image-capturing element having floation diffusion and hollow regions

An imaging device capable of further increasing the accuracy of distance information and an electronic apparatus equipped with the imaging device are provided. The present technology provides an imaging device that includes a stereo imager, and the stereo imager includes a plurality of sensors. Each sensor of the plurality of sensors has an imaging unit formed with a plurality of repeating units. The imaging unit includes a polarizer having at least one kind of polarization spindle angle, and at least two unit images obtained by a plurality of the imaging units are combined, to obtain information about polarization in at least three directions, and generate normal information. The present technology further provides an electronic apparatus equipped with the imaging device.

Imaging device and electronic apparatus

In an imaging element, a plurality of pixels each having a photoelectric conversion part is arranged in a two-dimensional matrix. Some of the plurality of pixels each have a polarizer placed therein on a side of a light beam incidence plane. At least some of pixels having no polarizer placed therein each have a material layer placed therein that prevents transmission of a light beam having a wavelength of a predetermined range, to reduce color mixture in the pixel having the polarizer placed therein.

Imaging element and electronic device including imaging device

The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.

Solid-state image-capturing element and having floating diffusion and hollow regions

The present technology relates to a semiconductor device, a solid-state image pickup element, an imaging device, and an electronic apparatus that can suppress characteristic fluctuations caused by capacitance fluctuations due to a dummy wire, while maintaining an affixing bonding strength by the dummy wire. Two or more chips in which wires that are electrically connected are formed on bonding surfaces and the bonding surfaces opposing each other are bonded to be laminated are included and, with respect to a region where the wires are periodically and repeatedly disposed in sharing units each made up of a plurality of pixels sharing the same floating diffusion contact, a dummy wire is disposed at the center position thereof on the bonding surface at a pitch of the sharing unit. The present technology can be applied to a CMOS image sensor.

Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus

Solid-state image-capturing element and electronic device

The present technology relates to an imaging device designed to be able to reduce luminance unevenness. An imaging device includes a photodiode and a wiring layer formed on a surface facing the incident surface of the photodiode. A wiring line is formed in the wiring layer, and the wiring line in a pixel is formed in a different pattern from a pattern in a different pixel. Another imaging device including a photodiode and a wiring layer formed on a surface facing the incident surface of the photodiode. A wiring line is formed in the wiring layer. A gap having a different dielectric constant from the dielectric constant of the material forming the wiring layer is formed in the wiring layer, and the gap in a pixel is formed in a different pattern from a pattern in a different pixel. The present technology can be applied to imaging devices.

Imaging device for reducing luminace unevenness

There is provided an image sensor having a plurality of pixels, each pixel including a light receiving portion configured to receive incident light, a waveguide configured to guide the incident light from a light incident surface to the light receiving portion, and a light shielding portion disposed between the light incident surface and the light receiving portion, for blocking the incident light. The light shielding portion has an opening formed near a light emitting surface of the waveguide. The light receiving portion receives the incident light passing through the waveguide and the opening. A width of a core of the waveguide and a width of the opening are set so that the widths increase as a wavelength of the light incident on a pixel becomes longer.

Image sensor, for suppressing occurrence of noise components

A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.

Solid-state imaging device with overflow drain region and contract thereto in different stacked substrates

Solid-state imaging device with overflow drain region and contact thereto in different stacked substrates

A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.

Growing community of inventors

Kanagawa, Japan

Takeshi Matsunuma