Nitto-denko Corporation

Matsushita Electronics Corporation

Matsushita Electric Industrial Co., Ltd.

Nittok Denko Corporation

Takeshi Matsumura

Shiro Iida

Sadahito Misumi

Naohide Takamoto

Masayoshi Kato

Kenji Itaya

Masashi Sangen

Masaki Mizutani

Goji Shiga

Kazuhito Hosokawa

Hiroyuki Kondo

Tetsuo Matsuba

Shinichiro Ishitsuka

Masayuki Yamamoto

Yasuhiro Amano

Tomokazu Takahashi

Takenori Shibata

Nobuharu Hata

Takashi Oda

Yoshinori Kakuno

Atsushi Hino

Yasushi Inoue

Naoyuki Matsuo

Takayuki Yamamoto

Masakatsu Urairi

Yuki Sugo

Naoyuki Nakamura

Katsuhiko Kamiya

Daisuke Uenda

Shuuhei Murata

Hironao Ootake

Yuta Kimura

Syouji Yamamoto

Masami Oikawa

Koichi Hashimoto

Eiji Toyoda

Fumiteru Asai

Kazuyuki Kiuchi

Tomohiro Taruno

Kosuke Morita

Kenji Nakano

Yasuo Kihara

Tetsuya Tahara

Shuhei Murata

Yuji Okawa

Kouji Akazawa

Junichi Takahashi

Chiaki Harada

Koichi Inoue

Tatsuya Kubozono

Yuichiro Shishido

Chie Iino

Yusaku Shimizu

Miki Morita

Shumpei Tanaka

Koji Mizuno

Tsuyoshi Torinari

Tsubasa Miki

Hiroyuki Kondou

Keisuke Watanabe

Masao Yukawa

Tatsuya Sekido

Tsunetaka Araki

Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 &#x3bc;m or less before the sheet is cured.

Sheet for sealing and method for manufacturing semiconductor device using said sheet for sealing

The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

Dicing tape-integrated film for semiconductor back surface

The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1&#xd7;10Pa&#xb7;S or more and 2&#xd7;10Pa&#xb7;S or less, and the shear modulus of the adhesive layer is 1&#xd7;10Pa or more and 2&#xd7;10Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120&#xb0; C.

Manufacturing semiconductor device with film for forming protective layer

The adhesive sheet for manufacturing a semiconductor device is an adhesive sheet for manufacturing a semiconductor device used when a semiconductor element is adhered to an adherend and the semiconductor element is wire-bonded, and is a peelable adhesive sheet in which the 180 degree peeling adhesive strength against a silicon wafer is 5 (N/25 mm width) or less.

Adhesive sheet for manufacturing semiconductor device, manufacturing method of semiconductor device using the sheet, and semiconductor device obtained by the method

A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.

Thermosetting resin sheet for sealing electronic component, resin-sealed type semiconductor device, and method for producing resin-sealed type semiconductor device

The present invention provides a dicing die bond film in which yielding and breaking of the dicing film are prevented and in which the die bond film can be suitably broken with a tensile force. In the dicing die bond film of the present invention, the tensile strength of the contact part in which the outer circumference of the push-up jig contacts the dicing film at 25&#xb0; C. is 15 N or more and 80 N or less and the yield point elongation is 80% or more, the tensile strength of the wafer bonding part of the dicing film at 25&#xb0; C. is 10 N or more and 70 N or less and the yield point elongation is 30% or more, [(the tensile strength of the contact part)&#x2212;(the tensile strength of the wafer bonding part)] is 0 N or more and 60 N or less, and the breaking elongation rate of the die bond film at 25&#xb0; C. is more than 40% and 500% or less.

Dicing die bond film and method of manufacturing semiconductor device

The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175-C is 2000 Pa or more.

Manufacturing method of semiconductor device, adhesive sheet used therein, and semiconductor device obtained thereby

The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

Dicing tape-integrated wafer back surface protective film

An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

Film for the backside of flip-chip type semiconductor, dicing tape-integrated film for the backside of semiconductor, method of manufacturing film for the backside of flip-chip type semiconductor, and semiconductor device

A manufacturing method of laser processed parts in which at least a pressure-sensitive adhesive layer is provided on a base material as a pressure-sensitive adhesive sheet for laser processing, using a material having specified physical properties. This method comprises adhering the pressure-sensitive adhesive sheet for laser processing to the laser beam exit side of the work by way of the pressure-sensitive adhesive layer, processing the work by irradiating the work with a laser beam of within 2 times of the irradiation intensity for forming a through-hole in the work, at higher than the irradiation intensity of threshold for inducing ablation of the work, and peeling the pressure-sensitive adhesive sheet for laser processing from the work after the machining. Therefore, contamination of the work surface by decomposition products can be effectively suppressed, and laser processed parts can be manufactured easily and at high production efficiency.

Manufacturing method of laser processed parts, and pressure-sensitive adhesive sheet for laser processing used for the same

The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has a light transmittance of 40% or more in terms of a light having a wavelength of 532 nm and the laser marking layer has a light transmittance of less than 40% in terms of a light having a wavelength of 532 nm.

Film for flip chip type semiconductor back surface

The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which a peel force (temperature: 23&#xb0; C., peeling angle: 180&#xb0;, tensile rate: 300 mm/min) between the pressure-sensitive adhesive layer of the dicing tape and the film for flip chip type semiconductor back surface is from 0.05 N/20 mm to 1.5 N/20 mm.

An object of the present invention is to provide an adhesive composition that can form an adhesive sheet for producing a semiconductor device capable of suppressing deterioration in ion scavengeability after the adhesive sheet goes through thermal history. It is an adhesive composition for producing a semiconductor device containing at least an organic complex-forming compound that forms a complex with cations, and the 5% weight loss temperature of the organic complex-forming compound measured by thermogravimetry is 180&#xb0; C. or more.

Adhesive composition for producing semiconductor device and adhesive sheet for producing semiconductor device

Growing community of inventors

Ibaraki, Japan

Takeshi Matsumura