Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Takeshi Kusakabe

Isao Ozawa

Toshitsune Iijima

According to an embodiment, a semiconductor memory device includes a substrate, a first stacked body, a columnar part, a second insulating film, and a second stacked body. The first stacked body is provided in a first region on the substrate. The second insulating film is provided in a second region on the substrate, and has a first thickness in a stacking direction of the first stacked body. The second stacked body is provided on the second insulating film. The second stacked body includes a first film and a third insulating film stacked alternately on one another. The uppermost first film in the first films of the second stacked body is located at a first distance in the stacking direction from the upper surface of the substrate. The first thickness is a thickness not less than 30 percent of the first distance.

Semiconductor memory device and method for manufacturing the same

A wiring board includes an insulating board defined by a first surface and a second surface opposing to the first surface; first signal strips disposed on the first surface; a first power distribution plane provided on the first surface so as to occupy a residual area of the first signal strips; lands disposed on the second surface; via metals penetrating the insulating board so as to connect the lands to the corresponding first signal strips; a second power distribution plane provided on the second surface.

Wiring board and a packaging assembly using the same

A semiconductor package of this invention comprises an electrode pad arranged on a semiconductor chip, a bonding wire, an end of which is coupled to the electrode pad, and a connection pad arranged parallel to a direction of arrangement of the bonding wire, to which another end of the bonding wire is coupled, and a pitch of the connection pad is wider than that of the electrode pad.

Growing community of inventors

Yokkaichi, Japan

Takeshi Kusakabe