Hitachi Displays, Ltd.

Pixtronix, Incorporated

Japan Display Inc.

Panasonic Liquid Crystal Display Co., Ltd.

Panasonic Liquid Display Co., Ltd.

Takeshi Kuriyagawa

Daisuke Sonoda

Takuo Kaitoh

Jun Fujiyoshi

Kazufumi Watabe

Yasukazu Kimura

Takeshi Noda

Eiji Oue

Toshihiro Sato

Toshiki Kaneko

Katsumi Matsumoto

Timothy J Brosnihan

Toshihiko Itoga

Toshiyuki Matsuura

Osamu Karikome

Kouhei Takahashi

Ryou Sakata

A base body including a plurality of first regions and a second region having a shape surrounding each of the first regions is prepared. A resin layer is formed in the plurality of first regions while avoiding the second region. A buried layer having a moisture-proof property higher than the resin layer is formed in the second region. A functional layer including a self-emitting element layer emitting light whose luminance is controlled for each of a plurality of unit pixels constituting an image is formed on the resin layer and the buried layer. The buried layer and the functional layer are cut along a line passing through the second region, so as to separate the resin layer into a plurality of portions respectively corresponding to the plurality of first regions.

Display device and method of manufacturing the same

A manufacturing method of a display device including a pixel region including a plurality of pixels each including a light emitting element and a terminal region provided outside the pixel region and including connection terminals; the method comprising: forming a recessed portion in a part of a top surface of each of the connection terminals; forming a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer sequentially in the pixel region and continuously in the terminal region; and etching the first inorganic insulating layer and the second inorganic insulating layer in an area where the first inorganic insulating layer and the second inorganic insulating layer are stacked directly, the area being on the top surface except the recessed portion.

Manufacturing method of display device and display device

A display device includes: a plurality of pixels each having a shutter plate formed and an actuator portion, wherein the actuator portion has a beam portion connected to the shutter plate, a drive electrode causing the beam portion to bend to drive the shutter plate, a first supporting portion supporting the drive electrode and fixed on a substrate, and a second supporting portion supporting the beam portion and fixed on the substrate, at least one of the first supporting portion and the second supporting portion has a planar portion, and a recessed portion formed to be concaved from the planar portion and connected to the substrate, and the recessed portion has a vertically formed portion formed to be inclined substantially vertically from the planar portion, and a portion starting from the vertically formed portion and formed such that the inclination of the portion becomes gentle toward the substrate.

Display device

A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.

Display device and method for manufacturing the display device

A display device according to the present invention includes a plurality of pixels provided on a substrate; a first insulating film provided on the substrate; a second insulating film provided on the first insulating film in contact with at least a part thereof and formed of a different material from that of the first insulating film; a plurality of MEMS shutters provided on the second insulating film respectively in correspondence with the plurality of pixels, the plurality of MEMS shutters having a third insulating film formed on side surfaces thereof; and a plurality of terminals for supplying a potential to the plurality of gate lines and the plurality of data lines, the plurality of terminals receiving the potential through openings formed in the first insulating film and the second insulating film, the openings being formed on the plurality of terminals.

Display device and method of manufacturing the display device

The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.

Display device and manufacturing method of the display device

A display device in which a plurality of gate wires and a plurality of drain wires that intersect the gate wires are provided, and thin film transistors connected to the gate wires and the drain wires are formed for respective pixel regions. At least one of the gate wires, the drain wires, and lead wires drawn from the gate wires or the drain wires is formed of a light-transmitting patterned conductive film. The light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film. The second light-transmitting patterned conductive film is formed of a conductive film for coating only the surface of the first light-transmitting patterned conductive film including its side wall surface.

Display device having a wiring of laminated light transmitting films

Display device and manufacturing method thereof

A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.

A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.

Display device with impurities formed within connection regions

In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes implanting an impurity in the third region so as to form a capacitor.

Manufacturing method of display device

The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.

Growing community of inventors

Mobara, Japan

Takeshi Kuriyagawa