Terumo Kabushiki Kaisha

Other

Mitsuteru Kimura

Mitsubishi Hitachi Power Systems, Ltd.

Takeshi Kudo

Yutaka Suzuki

Kiyoshi Komatsu

Takehisa Mori

Takashi Kitamura

Ryo Tsukamoto

Hitomi Kadono

This invention concerns a noncontacting type thermometer which is improved in sensitivity of detection and accuracy of measurement and meanwhile adapted to prevent a thermistor element itself from self-generation of heat. A pulse voltage generating circuit 15 generates a pulse voltage of a rectangular waveform having a pulse wave height, a pulse width, and a pulse cycle enough to render negligible the effects of the self-generation of heat of a thermistor bolometer element in accordance with the thermal capacity of the thermistor bolometer. A detecting circuit 20 admits the pulse voltage, generates a differential voltage arising from a change in the magnitude of resistance corresponding to the amount of an incident infrared radiation of an infrared radiation detecting thermistor bolometer element RA, and amplifies this differential voltage by means of a differential amplifier 24. A voltage adding circuit 30 admits a pulse voltage generated from the differential amplifier 24 synchronously with the pulse cycle of the pulse voltage generated from the pulse voltage generating circuit 15 and adds a prescribed number of pulses of the pulse voltage to produce an ultimate measured voltage.

Noncontacting thermometer

An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing the temperature characteristics of the saturated current flowing in the reverse direction through a Schottky junction diode. The infrared radiation sensor comprises an n type single crystal area 2 formed in the shape of a thin film by doping a sensor substrate 8 made of p type semiconductor with an n type impurity through the surface of the sensor substrate, a temperature sensor element 1 formed in the n type single crystal area 2, a hollow part 6 formed by removing by electrochemically etching the p type semiconductor from the substantially lower and peripheral parts of the n type single crystal area 2, and a thermally and electrically insulating thin film bridge structure having the n type single crystal area 2 in the shape of a thin film provided with the temperature sensor element 1 carried thereon.

Infrared radiation sensor

A semiconductor device includes a cavity portion formed in a supporting portion made of a semiconductor material so as to be surrounded by the supporting portion, and a silicon oxynitride film supported on one surface of the supporting portion so as to cover the cavity portion on the side of the one surface or a silicon oxynitride film supported on one surface of the supporting portion and so arranged as to form a bridged structure over the cavity portion. The composition of the silicon oxynitride film is selected in accordance with the material of the supporting portion. The former semiconductor device is produced by forming a silicon oxynitride film on one surface of a semiconductor substrate, forming an etching resistant film which has a pattern of a cavity portion, on another surface of the semiconductor substrate, and forming the cavity portion by selectively etching the semiconductor substrate using the etching resistant film as a mask until the formed cavity portion reaches said silicon oxynitride film. The latter semiconductor device is produced by the same process except that another step for patterning the silicon oxynitride film to form a bridge structure is included.

Semiconductor device and method for production thereof

A micro-pump having a cross-sectional area of not more than 5 mm.sup.2 and usable as a drive source for the operation of a micro-machine and as the controlled flow of a fluid and a method for the production of this micro-pump are provided. The micro-pump is characterized by comprising a comb-shaped stationary electrodes, a fluid chamber, a piston formed in the fluid chamber, comb-shaped movable electrodes formed integrally with the piston, a conductive film for imparting a grounding potential to the piston and the comb-shaped movable electrodes, and check valves and consequently having a drive source integrally formed therein.

Micro-pump and method for production thereof

A photoelectric transducer advantageously usable as an electrical energy source for driving units of work modules and sensors of a micromachine is provided. This photoelectric transducer is characterized by having a photoelectric transducing element, a self-exciting oscillating circuit, and voltage transformer and optionally further a storage mechanism formed on one substrate. It is further characterized by producing electrical power by the exposure of the photoelectric transducing element to a continuous light.

Photoelectric transducing device having a self-exciting oscillating

An infrared radiation sensor has a bridge portion which bridges a cave portion formed in a sensor substrate. The bridge portion includes an infrared radiation receiving portion and support portions for supporting the infrared radiation receiving portion. The plane shape of the infrared radiation receiving portion is a square or a circle which has a greater side length or a greater diameter than the width of the supporting portions to increase the amount of infrared radiation received by the infrared receiving portion.

Growing community of inventors

Kanagawa, Japan

Takeshi Kudo