Canon Kabushiki Kaisha

Ricoh Company, Ltd.

Jgc Corporation

Kabushiki Kaisha Toshiba

Seiko Instruments Inc

Sii Semiconductor Corporation

Sony Corporation

3m Innovative Properties Company

Ablic Inc.

Catalysts & Chemicals Industries Co., Ltd.

Takeshi Koyama

Keiji Ohtaka

Yasuo Suda

Ichiro Ohnuki

Akira Akashi

Akira Ishizaki

Takao Inoue

Kenji Mori

Shin Aoki

Hiroyuki Sakuyama

Taku Kodama

Takanori Yano

Takashi Maki

Akira Takahashi

Ikuko Yamashiro

Keiichi Ikebe

Yoshinaga Kato

Nobuhiro Yamada

Masao Tonosaki

Takashi Seki

Keiji Ikemori

Yoshinori Itoh

Nozomu Kitagishi

Akihiro Nishio

Sadatoshi Takahashi

Makoto Misaka

Kouji Oizumi

Kazuhiko Arakawa

Yasunori Murata

Hiroshi Umino

Yoshitsugu Hirose

Kozo Imura

Kouji Hoshi

Kenji Suzuki

Hideki Ogawa

Atsushi Itoh

Tsunefumi Tanaka

Kiyoshi Kasatani

Masashi Takeda

Yuichi Kojima

Koji Hoshi

Hidetoshi Abe

Masaki Higashihara

Hisashi Hasegawa

Shingo Hayakawa

Tomomitsu Risaki

Atsushi Takagi

Shinjiro Kato

Noboru Taga

Takayuki Kunieda

Motoyasu Yano

Alain Volmat

Takeru Inoue

Hideki Ishii

Sukehiro Yamamoto

Shizu Kanauchi

Akihiro Murayama

Yuki Wakita

Tatsuroh Sugioka

Atsuhiro Fujii

Keiichi Shinozaki

Shoichiro Kanematsu

Takahide Okuyama

Susumu Fujii

Masako Hirose

Shouichi Yamazaki

Hiroshi Fujishima

Koji Takiguchi

Kohei Kawabata

An information processing device includes circuitry to detect one of a device and an information processing terminal. The device is connected to the information processing terminal and used to receive an output image of the information processing terminal. The information processing terminal is connected to the information processing device via the device. The circuitry causes a display device connected to the information processing device to display the output image of the information processing terminal, according to a detection of the one of the device and the information processing terminal.

Information processing device, non-transitory recording medium, and information processing system

A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.

Semiconductor device and method of manufacturing the same

An information processing apparatus is provided in in a hierarchical structure of at least three hierarchies, and communicates with another information processing apparatus that is present in the immediately above hierarchy in the hierarchical structure to determine whether a version of the software installed on the information processing apparatus matches a version of the software installed on the immediately above information processing apparatus. The information processing apparatus also acquires setup information from the immediately above information processing apparatus upon determining that the software version installed on the information processing apparatus matches that of the software installed in the immediately above information processing apparatus.

Information processing apparatus, communication system, and method for processing information

An information processing terminal includes: circuitry to receive from a management system via a network, a candidate identifier of each one of one or more candidate counterpart information processing terminals that are previously registered for the information processing terminal; and to determine, in response to acceptance of an identifier that has been input, whether the accepted identifier matches any one of the candidate identifiers being received. Based on a determination indicating that the accepted identifier matches any one of the candidate identifiers, the circuitry transmits to the management system first request information requesting to start communication with the candidate counterpart information processing terminal identified with the accepted identifier. Based on a determination indicating that the accepted identifier does not match any one of the candidate identifiers, transmit to the management system second request information requesting to start communication with a counterpart information processing terminal identified with the accepted identifier, the circuitry transmits the second request information including destination information that differs from destination information included in the first request information.

Information processing terminal, management system, communication system, information processing method, and recording medium

First and second semiconductor light receiving elements each include: a first P-type semiconductor region which is formed in an N-type semiconductor substrate; a first N-type semiconductor layer region which is formed in the first P-type semiconductor region; a P-type semiconductor region having a high concentration which is formed in the first P-type semiconductor region; and an N-type semiconductor region having a high concentration which is formed in the first N-type semiconductor layer region. On the semiconductor substrate, insulating oxide films are formed. On the first and the second semiconductor light receiving elements, insulating oxide films that have different thicknesses are formed.

Semiconductor device including an ultraviolet light receiving element and method of manufacturing the same

Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodesvia a buried oxide film, and an SOI layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.

Semiconductor device having a light receiving element

In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a PN junction into a circular shape so that a uniform distance from an end portion of a light receiving element to an electrode serving as a carrier outlet is realized, to thereby enable carriers to be uniformly taken out from all directions.

Photodetection semiconductor device having light receiving element

A communication device includes: a receiving unit that receives metainformation indicating an update from an update information providing device to provide information related to the update; a determining unit that determines, on the basis of the received metainformation, whether an update needed for the communication device exists; a notifying unit that notifies, when the update exists, a user of existence of the update; an operation unit that receives, when the update exists, a selection operation as to whether the update is to be executed from the user; and an update processing unit that executes, when the selection operation to execute the update is received by the operation unit, the update on the basis of the received metainformation.

Communication device, update method, and computer program product for updating a program based on received metainformation

An image sensor has photodiodes formed in a Si substrate and configured to prevent carriers generated at a deep position of the Si substrate from affecting adjacent photodiodes due to lateral diffusion (crosstalk between pixels). A modified layer is formed between adjacent photodiodes and at a depth below that of the photodiodes by a laser to generate a recombination level to thereby suppress crosstalk between pixels.

Image sensor

An information processing apparatus for performing a competition game based on a game result determined from fighting information for each of a plurality of users in accordance with a predetermined rule. The fighting information is generated based on images input by the plural users. The information processing apparatus includes: an input unit inputting a picture drawn by the user as the image; a generation unit generating the fighting information used in the game based on an amount of features of the image input from the input unit; and a performing unit performing the game based on the fighting information for the plural users generated from the generation unit.

Information processing apparatus, information processing method, information processing program, and storage medium storing information processing program

When a refrained state is detected at a first transmission terminal, a transmission management system sends operation state information of the first transmission terminal, which is determined based on the refrained state of the first transmission terminal, to a second transmission terminal that may initiate communication with the first transmission terminal before the second transmission terminal starts communication with the first transmission terminal.

Apparatus, system, and method of managing data transmission, and transmission management program

Provided is a semiconductor device which uses a comb-like N-type MOS transistor as an ESD protection element and is capable of uniformly operating the entire comb-like N-type MOS transistor. By adjusting a length L of a gate electrode of the N-type MOS transistor used as the ESD protection element in accordance with the distance from a contact for fixing a substrate potential, which is provided on a guard ring around an outer periphery, respective portion of N-type MOS transistor represented as a comb teeth uniformly enter snap-back operation, permitting avoidance of local concentration of current and obtainment of a desired ESD tolerance.

Semiconductor device

Provided is a semiconductor device having high ESD tolerance. A first via () is used for electrically connecting a pad () to a drain of an NMOS transistor of an ESD protective circuit. The first vias () are formed under the pad () only on one side of a rectangular ring-shaped intermediate metal film () and on another side thereof opposed to the one side. In other words, all the first vias () for establishing an electrical connection to the drains are present substantially directly under the pad (). Consequently, a surge current caused by ESD and applied to the pad () is more likely to flow uniformly among all the drains. Then, respective channels of the NMOS transistor of the ESD protective circuit are more likely to uniformly operate, and hence the ESD tolerance of the semiconductor device is increased.

Provided is a semiconductor device having high ESD tolerance. A first via () is used for electrically connecting a pad to a drain of an NMOS transistor of an ESD protection circuit. The first via () is arranged directly above the drain and present substantially directly under the pad. Consequently, a surge current caused by ESD and applied to the pad is more likely to flow uniformly among all the drains. Then, respective channels of the NMOS transistor of the ESD protection circuit are more likely to uniformly operate, and hence the ESD tolerance of the semiconductor device increases.

Growing community of inventors

Tokyo, Japan

Takeshi Koyama