Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Takeshi Koiwasaki

Hisao Nagai

Takafumi Okuma

Isao Muragishi

Masahiro Yamamoto

Hitoshi Yamanishi

Masaaki Tanabe

Daisuke Suetsugu

Daisuke Yamamoto

Mitsuhiro Yoshinaga

Kai Takayuki

Saito Daishiro

A fine particle producing apparatus includes a reaction chamber extending vertically from the lower side to the upper side; a material supply device which is connected to a central part on one end side of the vertically lower side inside the reaction chamber and supplies a material particle into the reaction chamber of a vertically upper side from a material supply port; a first electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the material supply device, and includes a plurality of lower electrodes to which AC power is applied; a second electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the first electrode arrangement region, and includes a plurality of upper electrodes to which AC power is applied; a collector which is connected to the other end side in the reaction chamber of the vertically upper side so as to collect fine particles; a power source which is capable of changing a frequency of AC power applied to at least one of the lower electrode included in the first electrode arrangement region and the upper electrode included in the second electrode arrangement region; and a controller which sets the frequency of AC power applied to the lower electrode as a frequency equal to or higher than a frequency of AC power applied to the upper electrode, in which a fine particle is generated from the material particle by generating arc discharge by the lower electrode and the upper electrode, and generating plasma in the reaction chamber.

Fine particle producing apparatus and fine particle producing method

A production apparatus and method for fine particles are capable of increasing a production amount and producing fine particles at low cost by efficiently inputting a large amount of material to plasma. The production apparatus includes a material supply device, which includes a plurality of material supply ports that supply a material gas containing material particles and are arranged below a plurality of electrodes in a vertical direction inside a vacuum chamber. The material supply device further includes a first gas supply port that supplies a first shield gas arranged in an inner periphery of the plural material supply ports and plural second gas supply ports that supply a second shield gas arranged in an outer periphery of the plural material supply ports.

Production apparatus and production method for fine particles

A production apparatus for fine particles includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a fine particle collection device connected to the vacuum chamber and collecting fine particles. The fine particles are produced from the material by generating electric discharge inside the vacuum chamber. The apparatus includes an inner chamber which forms an outside space with respect to the vacuum chamber installed between a wall of the vacuum chamber and a plasma generation region and gas supply pipes which supply a gas to the outside space between the wall of the vacuum chamber and a wall of the inner chamber.

To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

Fine particle production apparatus and fine particle production method

A production apparatus for fine particles includes a vacuum chamber, a material supply device, a plurality of electrodes arranged and a collection device connecting to the other end of the vacuum chamber and collecting fine particles, which generates plasma and produces fine particles from the material particles, in which a first electrode arrangement region on the material supply port's side and a second electrode arrangement region apart from the first electrode arrangement region to the collection device's side which respectively cross a direction in which the material flows between the vicinity of the material supply port and the collection device are provided in the intermediate part of the vacuum chamber, and both the first electrode arrangement region and the second electrode arrangement region are provided with a plurality of electrodes respectively to form the electrodes in multi-stages.

A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for the part in which the resist has been formed, and a mask metal is formed on the conductive layer. Then, the resist is removed, and the base conductive member is etched using the mask metal as a mask to form the conductive layer into a predetermined shape.

Semiconductor device manufacturing method and semiconductor device

The present invention is to provide a sputtering apparatus and a sputtering method, specifically, a magnetron sputtering apparatus having a magnetron electrode capable of generating plasma in a wide region near the surface of a target, and a sputtering method using the apparatus. Thereby, a magnetic field shape enabling to generate plasma in a wide region near the surface of a target is realized, the use efficiency of the target material is increased, and dusts and abnormal electric discharges may be prevented. Magnetic circuitof a magnetron electrode is set as 'magnetic circuitin which center perpendicular magnet, inside parallel magnet, outside parallel magnet, and perimeter perpendicular magnetare arranged' from the central part of targettoward the perimeter part, and inside parallel magnetis brought close to target

Sputtering apparatus and sputtering method

Provided is a partial pressure measuring method and a partial pressure measuring apparatus by which a partial pressure distribution is easily measured in a vacuum chamber. The partial pressure measuring method and the partial pressure measuring apparatus includes: moving a local plasma source dedicated to partial pressure measuring provided in the vacuum chamber, to a location at which the measuring is to be performed; and measuring a partial pressure distribution in the vacuum chamber, by receiving emission of plasma generated by the local plasma source through a window which is formed in a wall part of the vacuum chamber and through which the emission passes, and thereby performing emission spectral analysis on intensity of the emission.

Growing community of inventors

Osaka, Japan

Takeshi Koiwasaki