Tokyo Electron Limited

Nec Corporation

Honda Giken Kogyo Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

Fuji Electric Co., Ltd.

Mitsubishi Gas Chemical Company, Inc.

Tokyo Electron Limi Ted

Tokyo Metropolitan Industrial Technology Research Institute

Tokyo Electron Limiied

Takeshi Kobayashi

Hitoshi Kato

Shigehiro Miura

Jun Sato

Yukio Ohizumi

Toshiyuki Nakatsubo

Chishio Koshimizu

Manabu Honma

Jun Yamawaku

Akio Handa

Hiroyuki Kikuchi

Mitsuhiro Tachibana

Masato Yonezawa

Makoto Ishiwatari

Naohide Ito

Takerou Shibukawa

Takeshi Ando

Takafumi Kimura

Katsuaki Sugawara

Yohei Yamazawa

Tatsuo Matsudo

Hiroaki Takahashi

Hideo Shimizu

Yutaka Murata

Kiichi Takahashi

Tatsuya Ishizaki

Mitsuzo Arii

Nobuhiko Tsuji

Yasunari Kawabata

Kuniaki Jinnai

Tatsuo Masuda

Tomoya Hasegawa

Takashi Chiba

Kazumasa Igarashi

Hitoshi Nishikawa

Shinichiro Gotoh

Tetsuya Saitoh

Saori Miyazaki

Jun Kaneki

Kiwamu Ito

Yoko Takano

Michio Oba

Takehiko Hiroshima

Kohei Fujiwara

Shujiro Ohnuma

Yuji Takabatake

Yasuhiro Washiyama

Yuki Tanaka

Akiko Inoue

An ignition controlling method is performed in a film forming apparatus including: a processing container that accommodates a substrate; a plasma box formed on the processing container; a pair of electrodes arranged to sandwich the plasma box therebetween; and an RF power supply connected to the pair of electrodes via a matching box including a variable capacitor. The ignition controlling method includes: storing first information indicating a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor, and second information indicating a voltage between the electrodes and the substrate; determining an initial position of the variable capacitor based on the first and second information; and selecting an area where a plasma ignition is to be performed from the plasma box and the processing container, by setting the adjustment positions of the variable capacitor to the initial position.

Ignition controlling method, film forming method, and film forming apparatus

A plasma processing apparatus includes a vacuum container and a plasma source that generates plasma in the vacuum container. The plasma source includes an antenna, an RF power supply connected to one end of the antenna and configured to supply an RF power to the antenna, and a variable capacitor connected to the other end of the antenna and having a variable capacitance.

Plasma processing apparatus and plasma processing method

With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.

Plasma processing method and substrate processing apparatus

A plasma generating apparatus includes: an electrode pair including a first plasma electrode and a second plasma electrode that are arranged to face each other; an RF power supply that supplies an RF power to the electrode pair; and a matching unit provided between the RF power supply and the electrode pair. The matching unit includes: a first variable capacitor and a second variable capacitor that are connected in parallel with respect to a load between the electrode pair; a coil connected in series with the first plasma electrode; and a capacitor connected in series with the second plasma electrode.

Plasma generating apparatus, plasma processing apparatus, and plasma processing method

An ignition method in a plasma processing apparatus includes: applying a first radio frequency from a radio-frequency power supply to an electrode of a plasma generator, thereby igniting plasma from a gas, the radio-frequency power supply being capable of applying a radio frequency of a variably controlled frequency to the electrode of the plasma generator; and applying a second radio frequency different from the first radio frequency to the electrode of the plasma generator after a predetermined time is elapsed after applying the first radio frequency to the electrode of the plasma generator.

Ignition method and plasma processing apparatus

A temperature measurement system includes: a thickness calculating unit that calculates an optical thickness of a substrate; a rotation position detecting unit that detects rotation position information of the rotary table; a substrate specifying unit that specifies a substrate based on the rotation position information; a storage unit that stores first relationship information indicating a relationship between a temperature and a thickness associated with each substrate, and second relationship information indicating a relationship between an amount of change in temperature and an amount of change in optical thickness associated with each substrate; and a temperature calculating unit that calculates a temperature of the substrate based on the optical thickness calculated by the thickness calculating unit, the substrate specified by the substrate specifying unit, the first relationship information, and the second relationship information.

Temperature measurement system, temperature measurement method, and substrate processing apparatus

A plasma processing method includes providing a plasma processing apparatus including a rotary table that is rotatably provided in a vacuum container and disposes a plurality of substrates on an upper surface along a circumferential direction, a gas supply source that supplies a plasma processing gas to at least one of a plurality of processing areas separated by a separation area in the circumferential direction of the rotary table, and an antenna that is provided to face the upper surface of the rotary table and generates plasma in the at least one processing area. The plasma processing method further includes disposing the plurality of substrates on the rotary table, and supplying the plasma processing gas into the vacuum container and supplying a pulsed wave of RF power to the antenna while rotating the rotary table.

Plasma processing method, plasma processing apparatus, and control apparatus

There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

Magnetic drive apparatus and magnetizing method

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

Substrate processing apparatus

A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

Substrate holding mechanism and substrate processing apparatus

There is provided a rotation detection jig used for an apparatus in which a substrate is processed inside a processing container by rotating a mounting stand for a substrate provided on one surface side of a rotary table while revolving the mounting stand with rotation of the rotary table, and supplying a processing gas to a region through which the mounting stand passes, including: a rotating element configured to rotate about a rotation shaft of the mounting stand; an encoder main body configured to detect a rotation angle of the rotating element and configured to constitute a rotary encoder together with the rotating element; a fixing member configured to fix the encoder main body to a rotating portion including the rotary table; and a signal processing part provided in the rotating portion and configured to process a detection signal detected by the encoder main body.

Rotation detection jig, substrate processing apparatus and method of operating the substrate processing apparatus

A rotation angle detection apparatus includes a movable pattern prepared on an outer peripheral side surface of a rotary shaft and having a shape that changes along a circumferential direction of the outer peripheral side surface; and a stationary pattern fixedly arranged around the rotary shaft so as to face the movable pattern. An overlapping state between the movable pattern and the stationary pattern changes by rotation of the rotary shaft. A physical quantity changing according to a change in the overlapping state between the movable pattern and the stationary pattern is detected, and a rotation angle of the rotary shaft is detected based on the physical quantity.

Rotation angle detection apparatus and rotation angle detection method, and substrate processing apparatus and substrate processing method using same

A film formation apparatus includes a rotary table provided in a processing container; a mounting table mounting a substrate and revolved by rotation of the rotary table; a film formation gas supply part configured to supply a film formation gas to a region through which the mounting table passes by the rotation of the rotary table; a spinning shaft rotatably provided on a portion rotating together with the rotary table; a driven gear provided on the spinning shaft; a driving gear configured to rotate while facing a revolution orbit of the driven gear and provided along an entire circumference of the revolution orbit so as to constitute a magnetic gear mechanism with the driven gear, and a relative-distance-changing mechanism configured to change a relative distance between the revolution orbit of the driven gear and the driving gear.

Film formation apparatus

A method of processing a substrate, includes: mounting at least one substrate on at least one substrate holder configured to rotate about an axis of the at least one substrate holder, the at least one substrate holder being provided along a circumferential direction of a rotary table installed inside a processing chamber; holding the at least one substrate by the at least one substrate holder in a contact manner by bringing a substrate contact portion into contact with at least three points on a lateral surface of the at least one substrate mounted on the at least one substrate holder; and performing a substrate process while rotating the rotary table and rotating the at least one substrate holder about the axis of the at least one substrate holder in a state where the at least one substrate is held by the at least one substrate holder in the contact manner.

Substrate processing method

A frequency converter receives a predetermined input signal and a predetermined local oscillation signal, and outputs a signal obtained by mixing the input signal with a harmonic signal having a frequency n times the frequency of the local oscillation signal, wherein a circuit that mixes the input signal with the harmonic signal is a harmonic mixer, which mixes the harmonic signal with the input signal using a nonlinear characteristic of a semiconductor element, and wherein the input signal or the output signal is subjected, either before input to the frequency converter or after output from the frequency converter, to correction on the basis of the amplitude and phase frequency characteristics of the frequency converter, which have been determined in advance.

Frequency converter, measuring system, and measuring method

Growing community of inventors

Tokyo, Japan

Takeshi Kobayashi