Hitachi, Ltd.

Sony Corporation

Sophia School Corporation

Nippon Hoso' Kyokai

Opnext Japan, Inc.

Takeshi Kikawa

Ichiro Nomura

Katsumi Kishino

Tsunenori Asatsuma

Sumiko Fujisaki

Hitoshi Nakamura

Shinichiro Takatani

Koshi Tamamura

Kunihiko Tasai

Shigeo Goto

Hiroshi Nakajima

Kazutaka Tsuji

Tadaaki Hirai

Junichi Yamazaki

Kouji Nakahara

Keiichi Shidara

Tsukuru Ohtoshi

Shigehisa Tanaka

Kenji Sameshima

Chushirou Kusano

Etsuko Nomoto

Yoko Uchida

Misao Kubota

Masatoshi Nakazawa

A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including BeMgZnTe (0&#x3c;x1&#x3c;1, 0&#x2266;x2&#x3c;1, 0&#x3c;x3&#x3c;1, x1+x2+x3=1) and a second semiconductor layer mainly including BeMgZnTe (0&#x3c;x4&#x3c;1, 0&#x3c;x5&#x3c;1, 0&#x2266;x6&#x3c;1, x4+x5+x6=1).

Semiconductor device

An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

EL semiconductor device

The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

Semiconductor laser diode device

Laser diodes containing aluminum at high concentration in an active layer have been usually suffered from remarkable facet deterioration along with laser driving operation and it has been difficult for the laser diodes to attain high reliability. An aluminum oxide film lacking in oxygen is formed adjacent to the semiconductor on an optical resonator facet, by which facet deterioration can be minimized and, accordingly, the laser diode can be operated with no facet deterioration at high temperature for long time and a laser diode of high reliability can be manufactured at a reduced cost.

Laser diode and manufacturing method thereof

A laser diode having an optical cavity which is formed on top of a semiconductor substrate and has semiconductor crystals and an oxide layer that is substantially free from arsenic oxide. The oxide layer may be formed by using the matrix of the optical cavity as a matrix or a layer formed by the hydrogenation or oxygenation of the matrix of the cavity on at least one side of the optical cavity. The laser diode has a long operational life and high reliability without facet degradation.

Laser diodes and manufacturing methods

A semiconductor radiative device comprises a layered film comprised of a low-refraction first dielectric film and a high-refraction second dielectric film having a refraction index greater than that of the first dielectric film, and formed on at least one of facets of an optical cavity. The high-refraction second dielectric film is an amorphous dielectric film of nitrogen-doped hydrogenated silicon. The semiconductor radiative device is capable of stably operating in a high-output mode for a long period of time.

Semiconductor radiative device

Disclosed is a semiconductor device capable of suppressing the generation of dislocations due to the difference in lattice constant by insertion of one or more defect type compound layers in a semiconductor layered structure. The strain generated by the mismatch of the lattice is relaxed by a large amount of vacancies contained in the defect type compound layer, to suppress the generation and the propagation of dislocations, thus inexpensively fabricating a semiconductor device with less deterioration of the characteristics due to defects with good repeatability.

Semicoductor device having defect type compound layer between single

A compound semiconductor is etched by a step of substituting a composite element of a compound semiconductor with other element, thereby forming a compound layer on the surface of the compound semiconductor and a step of removing the compound layer from the surface. Etching depth is controlled not by etching time, but by the number of runs (repetitions) of the etching step, and thus can be precisely controlled.

Method and apparatus for etching compound semiconductor

A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

Photoconductive device and method of operating same

Growing community of inventors

Kodaira, Japan

Takeshi Kikawa