Seiko Epson Corporation

Youtec Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Advanced Material Technologies, Inc.

Krystal Inc.

Other

Sae Magnetics (h.k.) Limited

Japan Represented by President of Tokyo Institute of Technology

Takeshi Kijima

Eiji Natori

Yasuaki Hamada

Yuuji Honda

Koji Ohashi

Takamitsu Higuchi

Setsuya Iwashita

Hironori Matsunaga

Mayumi Ueno

Koichi Furuyama

Mitsuhiro Suzuki

Hiromu Miyazawa

Yuzo Tasaki

Masayoshi Koba

Sakiko Satoh

Junichi Karasawa

Satoshi Kimura

Hidemichi Furihata

Tatsuya Shimoda

Akio Konishi

Motohisa Noguchi

Toshihiko Kaneda

Maho Ushikubo

Masami Hashimoto

Takekazu Shigenai

Yukinori Tani

Minoru Usui

Satoshi Inoue

Takeshi Nomura

Masao Nakayama

Kazuya Ishihara

Noboru Ohtani

Taku Aoyama

Shoichi Iino

Tomokazu Kobayashi

Hiroshi Ishiwara

Daisuke Kobayashi

Akira Okutoh

Daisuke Iitsuka

Tomoyuki Araki

Tetsu Miyoshi

Haruhito Hayakawa

Hiroyuki Ogihara

Kenjirou Hata

A film structure () includes a substrate (), a piezoelectric film () formed on the substrate () and containing first composite oxide represented by a composition formula Pb(ZrTi)O, and a piezoelectric film () formed on the piezoelectric film () and containing second composite oxide represented by a composition formula Pb(ZrTi)O. In the composition formulae, x satisfies 0.10&#x3c;x&#x2264;0.20, and y satisfies 0.35&#x2264;y&#x2264;0.55. The piezoelectric film () has tensile stress, and the piezoelectric film () has compressive stress.

Film structure and method for manufacturing the same

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.

Film structure body and method for manufacturing the same

Ferroelectric ceramics including: a Pb(ZrTi)Oseed crystal film formed on a foundation film; and a Pb(ZrTi)Ocrystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below,0.1&#x3c;&#x3c;1&#x2003;&#x2003;formula 20.1&#x3c;&#x3c;1&#x2003;&#x2003;formula 3.

Ferroelectric ceramics, electronic component and manufacturing method of ferroelectric ceramics

To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.

Film structure body, actuator, motor and method for manufacturing film structure body

An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.

Piezoelectric film and piezoelectric ceramics

An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiOfilm formed on the Pt film, and a PZT film formed on the SrTiO, wherein the stacked film is formed by repeating sequentially N times a first ZrOfilm and a YOfilm, and a second ZrOfilm is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.

Ferroelectric ceramics and method for manufacturing the same

A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700&#xb0; C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrOfilm on said Zr film on a substrate heated to 700&#xb0; C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a YOfilm on said ZrOfilm on a substrate heated to 700&#xb0; C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

Method for manufacturing crystal film

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(TiRu)Ofilm and a PZT film formed on the first Sr(TiRu)Ofilm, wherein the x satisfies a formula 1 below.0.01&#x2264;&#x2264;0.4&#x2003;&#x2003;formula 1

Electrode, ferroelectric ceramics and manufacturing method thereof

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pbas A-site ions and containing Zrand Tias B-site ions, and the A-site contains Bias A-site compensation ions and the B-site contains Nbas B-site compensation ions.

PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film

A pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment of the pressurizing-type lamp annealing device includes: a treatment chamber (); a holding part () disposed in the treatment chamber to hold a substrate to be treated; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube () disposed in the treatment chamber; and a lamp heater () placed in the treatment chamber to irradiate the substrate with a lamp light through the transparent tube.

Pressurizing-type lamp annealing device, method for producing thin film, and method for using pressurizing-type lamp annealing device

A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400&#xb0; C. or more and 900&#xb0; C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.

Thermal poling method, piezoelectric film and manufacturing method of same, thermal poling apparatus, and inspection method of piezoelectric property

To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrOfilm oriented in (200), a Pt film that is formed on the ZrOfilm and is oriented in (200) and a piezoelectric film formed on the Pt film.

Ferroelectric ceramics and manufacturing method thereof

To enhance piezoelectric property. One aspect of the present invention is ferroelectric ceramics including a Pb(ZrTi)Ofilm, wherein: the x satisfies the following formula 1, the Pb(ZrTi)Ofilm has a plurality of columnar single crystals, the x axis, the y axis and the z axis of each of the plurality of columnar single crystals are oriented in the same direction, respectively,0&#x3c;x&#x3c;1&#x2003;&#x2003;formula 1.

Feroelectric ceramics and method for manufacturing the same

To perform poling treatment in a simple procedure by dry process. A magnetic field poling device includes a first holding part configured to hold a film-to-be-poled (); a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled (); and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

Poling treatment method, magnetic field poling device, and piezoelectric film

Growing community of inventors

Matsumoto, Japan

Takeshi Kijima