Canon Kabushiki Kaisha

Ricoh Company, Ltd.

Nippon Kokan Kabushiki Kaisha

Nkk Corporation

Takeshi Kawashima

Hiroaki Nishio

Yasuhiro Nagatomo

Katsuyuki Hoshino

Shoichi Kawashima

Shunichi Sato

Hirokazu Iwata

Morimasa Kaminishi

Hideharu Yamamoto

Jun Harada

Yoshio Takagi

A reflector includes a low refractive index layer having a first average refractive index; and a high refractive index layer having a second average refractive index. The low refractive index layer includes a laminate of alternate Ga-doped AlN layers and layers consisting essentially of GaN. The high refractive index layer includes an InGaN layer. The second average refractive index is higher than the first average refractive index.

Reflector, surface-emitting laser, light source, projection device, display device, light-emitting device

A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.

Nitride semiconductor multilayer structure, light emitting element, light source apparatus, and method for producing nitride semiconductor multilayer structure

A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser

A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

Light emitting device and method of manufacturing light emitting device

A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.

Semiconductor DBR, semiconductor light-emitting device, solid-state laser, photoacoustic apparatus, image-forming apparatus, and method for manufacturing semiconductor DBR

In a reflector including an AlGaN layer, an InGaN layer, and a GaN layer placed therebetween, high reflectivity and a wide reflection band are achieved. A reflector includes a substrate containing GaN; first layers containing AlGaN; second layers containing InGaN; and a third layer containing GaN, the first, second, and third layers being stacked on the substrate. The first and second layers are alternately stacked, the third layer is placed between one of the first layers and one of the second layers, x and y satisfy a specific formula, the first layers have a thickness less than the thickness of the second layers, and the second layers have an optical thickness of &#x3bb;/8 to 3&#x3bb;/8, where &#x3bb; is the central wavelength of the reflection. band of the reflector.

Reflector, surface-emitting laser, solid-state laser device, optoacoustic system, and image-forming apparatus

The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method

A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.

Nitride semiconductor surface emitting laser and method of manufacturing the same

A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.

Nitride semiconductor light-emitting device with a layer containing In and Mg and method for producing the same

A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.

Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof

A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength &#x3bb;. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region.

Distributed feedback surface emitting laser

There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.

Process for producing semiconductor device and semiconductor device

A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850&#xb0; C. to 950&#xb0; C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

Manufacturing method of microstructure

A mold for slip casting comprising a compact formed out of a mixture having an organic matter and powders, the organic matter being capable of being extracted by supercritical fluid and the powders being incapable of being extracted by the supercritical fluid, and furthermore, a method for slip casting comprising a compact formed out of an organic matter capable of being extracted by supercritical fluid and having a melting point of 0.degree. to 150.degree. C. The organic matter is any one selected from the group of methyl carbonate, t-butyle alcohol, stearic acid stearyl alcohol and paraffin.

Growing community of inventors

Tokyo, Japan

Takeshi Kawashima