Ricoh Company, Ltd.

Takeshi Kawashima

Shunichi Sato

Hirokazu Iwata

Morimasa Kaminishi

A reflector includes a low refractive index layer having a first average refractive index; and a high refractive index layer having a second average refractive index. The low refractive index layer includes a laminate of alternate Ga-doped AlN layers and layers consisting essentially of GaN. The high refractive index layer includes an InGaN layer. The second average refractive index is higher than the first average refractive index.

Reflector, surface-emitting laser, light source, projection device, display device, light-emitting device

A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.

Nitride semiconductor multilayer structure, light emitting element, light source apparatus, and method for producing nitride semiconductor multilayer structure

A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser

A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

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Miyagi, Japan

Takeshi Kawashima