Renesas Electronics Corporation

Sony Corporation

Ebara Corporation

Hitachi, Ltd.

Mitsubishi Electric Corporation

Other

Mitsubishi Electric Home Appliance Co., Ltd.

Takeshi Kawamura

Kazuo Tomita

Yukinobu Imamura

Nobuo Nakamura

Mitsushi Abe

Katsuakira Moriwake

Kiyoshi Yanagisawa

Shigeyoshi Nagata

Hideaki Miyauchi

Fumio Shimizu

Hiroyuki Takeuchi

Hiroyuki Shinozaki

Atsushi Imai

Toshiharu Nakazawa

Shinichi Sekiguchi

Naoya Matsunaga

Hiroaki Adachi

Takeshi Yatsuo

Toshimitsu Barada

Tetsuya Tazawa

Masanao Terada

Ryuya Ando

Manabu Aoki

Takeshi Kamino

Katsuya Ishigami

Takahiro Tomimatsu

Koichi Kagawa

Yasuhiro Niimura

Yuki Hasegawa

Tatsuhiko Kawakami

Takuro Honda

Yukio Kawata

Ichirou Masuda

An upper surface of a plug (PL) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (S), completing a CMP method for forming the plug (PL) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL) and a wiring (W) in a vertical direction can be ensured. Also, the wiring (W) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Semiconductor device and method of manufacturing the same

A conduit attachment component with a box shape in an indoor unit of an air-conditioning apparatus includes a first component, a second component, and a third component. The second component and the third component are removably attached to the first component. The second component includes a first plate portion to which a conduit is connected. The third component includes a second plate portion. Any one of a plurality of side portions of the conduit attachment component is a first side portion, and a side portion of the plurality of side portions, adjacent to the first side portion, is a second side portion. In a first state, the first plate portion is the first side portion, and the second plate portion is the second side portion. In a second state, the first plate portion is the second side portion, and the second plate portion is the first side portion.

Indoor unit of air-conditioning apparatus

A drain pan includes: a drain pan unit that includes a horizontal water receiving unit and a vertical water receiving unit intersecting with each other in an L shape and is used as horizontal and vertical types; and a water discharge socket for discharging, from the drain pan unit, drain water received on the drain pan unit. A drain port is opened through a water-receiving surface of each of the horizontal water receiving unit and the vertical water receiving unit at a corner of intersection of the drain pan unit. The water discharge socket entirely covers the drain port on an outer side of the corner, which is a major angle side.

Drain pan and refrigeration cycle apparatus

An alternating current loss measuring apparatus for superconductors includes a superconductor specimen, a magnetic field applying coil, a radiation shield, a vacuum vessel, first cooling means, and second cooling means. The first cooling means or the second cooling means is provided with a temperature regulating mechanism. The magnetic field applying means and the radiation shield are set to be a first cooling part, whereas the superconductor specimen is set to be a second cooling part, and the first cooling part and the second cooling part are cooled by first and second cooling means, respectively. A high thermal resistance member is disposed between the superconductor specimen and the second cooling means, and temperature measuring means are disposed at at least two positions on the high thermal resistance member. The alternating current loss of a superconductor under an external magnetic field can be measured at each of different temperatures.

Alternating current loss measuring apparatus

In a gradient magnetic field coil device including: a plurality of main coils generating in an imaging region of a magnetic field resonance imaging device a magnetic field distribution in which an intensity linearly inclines; and a plurality of shield coils, arranged on an opposite side of the imaging region across the main coils, suppressing residual magnetic field generated by the main coils on the opposite side. The plurality of main coils and the plurality of shield coils are connected in series. The device further includes a plurality of current adjusting devices, connected to the shield coils in parallel, independently adjusting currents flowing through the shield coils, respectively, to enhance symmetry of the residual magnetic field. The gradient magnetic field coil device is provided which can suppress generation of eddy current magnetic field even if there is a relative position deviation between the main coils and shield coils.

Gradient magnetic field coil device, adjustment method therefor, and magnetic resonance imaging apparatus

Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.

Semiconductor integrated circuit device

A device includes: a static magnetic field generating device including static magnetic field generating sources generating a homogeneous magnetic field in a space; gradient magnetic field generating sources superimposing a gradient magnetic field on the homogeneous magnetic field, and conductor rings arranged between the static magnetic field generating sources and the gradient magnetic field generating sources in a pair of arranging regions on both sides in a direction of the homogeneous magnetic field in a region where the homogeneous magnetic field is generated (imaging region), respectively, the conductor rings being separated from each other and making a pair. The conductor rings are mechanically connected to the gradient magnetic field generating device or the static magnetic field generating device. This provides an MRI device 1 capable of reduction in vibration with suppression of the image quality deterioration of the tomographic images.

Magnetic resonance imaging device with vibration suppression

The present invention relates to an evacuation apparatus for evacuating a vacuum chamber of a substrate processing apparatus for processing a substrate such as a semiconductor wafer or liquid crystal panel. An evacuation apparatus according to the present invention includes a first vacuum pump connected to a vacuum chamber, and a second vacuum pump connected to the first vacuum pump. The first vacuum pump has a pair of multistage pump rotors.

Evacuation apparatus

To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall.

Image pickup device and method of manufacturing the same

Provided is a semiconductor device having improved performance and an improved manufacturing yield. Over photodiodes formed in a semiconductor substrate, a plurality of first to third embedded insulating films are stacked to form a waveguide for light incident on each of the photodiodes. The first embedded insulating film is formed simultaneously with plugs when the plugs are formed. The second embedded insulating film is formed simultaneously with first wires when the first wires are formed. The third embedded insulating film is formed simultaneously with second wires when the second wires are formed.

Method of manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Takeshi Kawamura