Hamamatsu-photonics K.k.

Takeshi Kawahara

Hisanori Suzuki

Kentaro Maeta

Yasuhito Miyazaki

Tatsuki Kasuya

A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

Growing community of inventors

Hamamatsu, Japan

Takeshi Kawahara