University of California

Kyocera Corporation

Takeshi Kamikawa

Srinivas Gandrothula

Katsuaki Masaki

Hongjian Li

Fumio Yamashita

Yuta Aoki

Yoshinobu Kawaguchi

A substrate includes an upper surface and wiring lines disposed on the upper surface. The first optical semiconductor element is disposed on the upper surface of the substrate, and the second optical semiconductor element is adjacent to the first optical semiconductor element. The first optical semiconductor element includes a first electrode and a second electrode each disposed at a lower end portion of the first optical semiconductor element, and each of the first electrode and the second electrode is connected to a corresponding one of the wiring lines.

Optical device and light emitting device

A template substrate including a first seed region and a growth restricting region that are aligned in a first direction, and a first semiconductor part positioned above the template substrate are provided, the first semiconductor part includes a first base positioned above the first seed region, and a first wing connected to the first base, the first wing facing the growth restricting region with a first void space interposed therebetween, the first wing includes an edge positioned above the growth restricting region, and a ratio of a width of the first void space with respect to a thickness of the first void space in the first direction is equal to or larger than 5.0.

Semiconductor substrate, and manufacturing method and manufacturing apparatus of semiconductor substrate

A method of removing a substrate from III-nitride based semiconductor layers with a cleaving technique. A growth restrict mask is formed on or above a substrate, and one or more III-nitride based semiconductor layers are grown on or above the substrate using the growth restrict mask. The III-nitride based semiconductor layers are bonded to a support substrate or film, and the III-nitride based semiconductor layers are removed from the substrate using a cleaving technique on a surface of the substrate. Stress may be applied to the III-nitride based semiconductor layers, due to differences in thermal expansion between the III-nitride substrate and the support substrate or film bonded to the III-nitride based semiconductor layers, before the III-nitride based semiconductor layers are removed from the substrate. Once removed, the substrate can be recycled, resulting in cost savings for device fabrication.

Method of removing a substrate with a cleaving technique

A method for obtaining a smooth surface of an epi-layer with epitaxial lateral overgrowth. The method does not use mis-cut orientations and does not suppress the occurrence of pyramidal hillocks, but instead embeds the pyramidal hillocks in the epi-layer. A growth restrict mask is used to limit the expansion of the pyramidal hillocks in a lateral direction. The surface of the epi-layer becomes extremely smooth due to the disappearance of the pyramidal hillocks.

Growing community of inventors

Kyoto, Japan

Takeshi Kamikawa