Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Takeshi Kamikawa

Yoshinobu Kawaguchi

Shigetoshi Ito

Mototaka Taneya

Kensaku Motoki

Masatomi Harada

Yoshika Kaneko

Toshihiko Sakai

Eiji Yamada

Masahiro Araki

Tokuaki Kuniyoshi

Teruyoshi Takakura

Kazuya Tsujino

Liumin Zou

Yuhzoh Tsuda

Yoshihiro Ueta

Takayuki Yuasa

Masataka Ohta

Kenichi Higashi

Masahumi Kondou

Toshiyuki Kawakami

Toshio Hata

Taiji Morimoto

Tomoki Ono

Toshiyuki Okumura

Nobuaki Teraguchi

Yoshihiko Tani

Masaya Ishida

Kensaku Yamamoto

Yuta Matsumoto

Naoki Koide

Tatsuya Ryowa

Naoki Asano

Hirokazu Mouri

Kyoko Matsuda

Rihito Suganuma

Ryuichi Sogabe

Yukiko Morishita

n-type amorphous semiconductor layers () and p-type amorphous semiconductor layers () are alternately disposed on the back surface of a semiconductor substrate () so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (). An electrode () is disposed on the n-type amorphous semiconductor layer (), and an electrode () is disposed on the p-type amorphous semiconductor layer (). A protective film () includes an insulating film, and is disposed on a passivation film (), the n-type amorphous semiconductor layer (), the p-type amorphous semiconductor layer (), and the electrodes (), so as to be in contact with the passivation film (), the n-type amorphous semiconductor layer (), the p-type amorphous semiconductor layer (), and the electrodes ().

Photovoltaic devices, photovoltaic modules provided therewith, and solar power generation systems

Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8&#xd7;10cmor more, and is lower than the dopant concentration of the first concentration layer.

Photoelectric conversion device

In a photovoltaic device (), first amorphous semiconductor portions () and second amorphous semiconductor portions () are provided alternately on one of faces of a semiconductor substrate (). Each first amorphous semiconductor portion () has at least one first amorphous semiconductor strip (), and each second amorphous semiconductor portion () has at least one second amorphous semiconductor strip (). A plurality of first electrodes () are provided spaced apart from each other on each first amorphous semiconductor strip (), and a plurality of second electrodes () are provided spaced apart from each other on each second amorphous semiconductor strip ().

Photovoltaic device

A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic deviceincludes: a semiconductor substrate; an intrinsic amorphous semiconductor layerprovided on the semiconductor substrate; n-type amorphous semiconductor stripscontaining phosphorus as a dopant; and p-type amorphous semiconductor stripscontaining boron as a dopant, the n- and p-type amorphous semiconductor stripsandbeing provided alternately on the intrinsic amorphous semiconductor layeras viewed along an in-plane direction. Each n-type amorphous semiconductor stripincludes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips. Each p-type amorphous semiconductor stripincludes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips. The reduced-thickness region TD(p) of the p-type amorphous semiconductor striphas a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip

A photovoltaic device () includes: an i-type amorphous semiconductor layer () formed in contact with one of the surfaces of a semiconductor substrate (); p-type amorphous semiconductor strips () spaced apart from each other and provided on the i-type amorphous semiconductor layer (); and n-type amorphous semiconductor strips () spaced apart from each other and provided on the i amorphous semiconductor layer (), each n-type amorphous semiconductor strip () being adjacent to at least one of the p-type amorphous semiconductor strips () as traced along an in-plane direction of the semiconductor substrate (). The photovoltaic device () further includes electrodes () as a protection layer formed in contact with the i-type amorphous semiconductor layer () between adjacent p-type amorphous semiconductor strips () and between adjacent n-type amorphous semiconductor strips ().

A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrateand a memberin contact with one surface of the substrate is stacked, and the substrateand the memberin contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrateand the memberin contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate

Film-forming method

There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (). The n-type single crystal silicon substrate () includes a central region () and an end-portion region (). The central region () is a region which has the same central point as the central point of the n-type single crystal silicon substrate () and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (). The central region () has a thickness t. The end-portion region () is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (). The end-portion region () is disposed on an outside of the central region () in an in-plane direction of the n-type single crystal silicon substrate (), and has a thickness twhich is thinner than the thickness t. The end-portion region () has average surface roughness which is smaller than average surface roughness of the central region ().

Photoelectric conversion element and solar cell module provided with same

A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate.

Light emitting device, illuminating device and method of manufacturing light emitting device

A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

Nitride semiconductor light emitting device

A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member.

Semiconductor light emitting device

A nitride semiconductor light emitting device includes an n-type GaN substrate () that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (), a p-type AlGaInN cladding layer () under the p-type AlGaInN contact layer (), and a p-type AlGaInN layer (). A protection film () made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.

Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device

A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element () for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part () having a through-hole () in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (); a translucent cover () for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (); and a UV-excited phosphor () which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part ().

Semiconductor light-emitting device

There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device

A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

Growing community of inventors

Mihara, Japan

Takeshi Kamikawa