Sumco Corporation

Takeshi Kadono

Kazunari Kurita

Takuro Iwanaga

Ryo Hirose

Akihiro Suzuki

A method of producing an epitaxial silicon wafer includes irradiating a surface of a silicon wafer with a beam of cluster ions containing SiHions (at least one of the integers 1 to 3 is selected as x of the SiHions) and CHions (at least one of the integers 2 to 5 is selected as y of the CHions) to form a modified layer that is located in a surface layer portion of the silicon wafer and that contains as a solid solution of the constituent elements of the cluster ion beam, and further includes forming a silicon epitaxial layer on the modified layer of the silicon wafer. The dose of the SiHions is 1.5×10ions/cmor more.

Epitaxial silicon wafer, method for producing same, and method for producing semiconductor device

Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

Epitaxial wafer manufacturing method and epitaxial wafer

Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing carbon, hydrogen, and nitrogen as constituent elements to form a modified layer that is located in a surface portion of the semiconductor wafer and contains the constituent elements of the cluster ions as a solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer.

Semiconductor epitaxial wafer and method of producing the same

Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of CH(n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.

Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state imaging device

A semiconductor epitaxial wafer production method that can increase the peak concentration of hydrogen in a surface portion of a semiconductor wafer after epitaxial layer formation is provided. A method of producing a semiconductor epitaxial wafer comprises: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing hydrogen as a constituent element, to form a modifying layer formed from, as a solid solution, a constituent element of the cluster ions including hydrogen in a surface portion of the semiconductor wafer; a second step of, after the first step, irradiating the semiconductor wafer with electromagnetic waves of a frequency of 300 MHz or more and 3 THz or less, to heat the semiconductor wafer; and a third step of, after the second step, forming an epitaxial layer on the modifying layer of the semiconductor wafer.

Method for producing semiconductor epitaxial wafer and method of producing solid-state imaging device

Provided is a method of manufacturing an epitaxial wafer having an excellent gettering capability while suppressing formation of epitaxial defects. The method includes: a cluster ion irradiation step of irradiating a surface of a silicon wafer having a resistivity of from 0.001 &#x3a9;&#xb7;cm to 0.1 &#x3a9;&#xb7;cm with cluster ions containing at least carbon at a dose of from 2.0&#xd7;10/cmto 1.0&#xd7;10/cmto form, on a surface portion of the silicon wafer, a modifying layer composed of a constituent element of the cluster ions in the form of a solid solution; and an epitaxial layer forming step of forming, on the modifying layer on the silicon wafer, an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer.

The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. A method of producing a semiconductor epitaxial waferaccording to the present invention includes a first step of irradiating a semiconductor waferwith cluster ionsto form a modifying layerformed from a constituent element of the cluster ionsin a surface portionA of the semiconductor wafer; and a second step of forming an epitaxial layeron the modifying layerof the semiconductor wafer

Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device

Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. A method of producing an epitaxial silicon wafer includes a first step of irradiating a silicon wafer free of dislocation clusters and COPs with cluster ions to form a modifying layer formed from a constituent element of the cluster ions in a surface portion of the silicon wafer; and a second step of forming an epitaxial layer on the modifying layer of the silicon wafer.

Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state image sensing device

Provided is a semiconductor epitaxial wafer with reduced metal contamination achieved by higher gettering capability. The semiconductor epitaxial wafer includes a silicon wafer including COPs; a modifying layer formed from a certain element in the silicon wafer, in a surface portion of the silicon wafer; and an epitaxial layer on the modifying layer, wherein the full width half maximum of a concentration profile of the certain element in the depth direction of the modifying layer is 100 nm or less.

Semiconductor epitaxial wafer

Provided is an epitaxial silicon wafer with reduced metal contamination achieved by higher gettering capability and a method of efficiently producing the same. The method of producing an epitaxial wafer includes a wafer production step of pulling a single crystal silicon ingot having a COP formation region by Czochralski process, and subjecting the obtained single crystal silicon ingot to slicing, thereby producing a silicon waferincluding COPs; a cluster ion irradiation step of irradiating the produced silicon waferwith cluster ionsto form a modifying layerformed from a constituent element of the cluster ions, contained as a solid solution in a surface portionA of the silicon wafer; and an epitaxial layer formation step of forming an epitaxial layeron the modifying layerof the silicon wafer

Growing community of inventors

Minato-ku, Japan

Takeshi Kadono