Renesas Electronics Corporation

Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Takeshi Iwamoto

Kazushi Kono

Toshiaki Yonezu

Shigeki Obayashi

Masashi Arakawa

Yasuhiro Ido

Hisayuki Kato

Rui Toyota

Hiroshi Ohnishi

Shigeo Sasaki

Yoshihiko Kusakabe

Kouichirou Tsutahara

Kazuo Yoshida

Nobuyuki Kosaka

Yoshimi Kinoshita

Kenichiro Yamanishi

Toshihiko Noguchi

Taizo Eshima

Takahiro Uchida

Tomoyuki Kanda

Hideki Komori

Katsuhisa Kitano

Toru Takahama

Masatoshi Kimura

Kaoru Motonami

Kakutaro Suda

Hiroaki Sekikawa

Hideki Doi

Kazuhide Kawabe

A semiconductor device is provided which includes an interlayer dielectric formed on a semiconductor substrate, a first insulating layer, having a trench, formed on the interlayer dielectric, a barrier film formed on side and bottom surfaces of the first trench, an electric fuse formed on the barrier film, a second insulating layer formed to directly contact the electric fuse, and a third insulating layer formed on the second insulating layer. A linear expansion coefficient of the electric fuse is greater than a linear expansion coefficient of the first insulating layer and the second insulating layer, and a melting point of the barrier film is greater than a melting point of the electric fuse.

Semiconductor device and a method of increasing a resistance value of an electric fuse

A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.

Semiconductor device and a method increasing a resistance value of an electric fuse

A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first the via hole wiring is surrounded.

Semiconductor integrated circuit

A semiconductor device having an electrical fuse which is cut in a reliable manner and a method for manufacturing it. The electrical fuse is a multilayer structure which includes a polysilicon film and a metal silicide film such as a tungsten silicide film. By applying an electric current with a density of 40 mA/&#x3bc;mor more to the electrical fuse with a prescribed length, the fuse is cut by electromigration and a pinch effect in a reliable manner.

Semiconductor device with electrical fuse

The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portionsare formed in the position shifted from the middle position of electric fuse part, and, more concretely, are formed in the position distant from viaand near via. A plurality of projecting portionsare formed in the position shifted from the middle position of electric fuse part, and, more concretely, are formed in the position distant from viaand near. That is, projecting portionsand projecting portionsare arranged in the shape of zigzag.

Semiconductor device

In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.

Semiconductor device having electrical fuses with less power consumption and interconnection arrangement

Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.

A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.

A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse.

Semiconductor device and fuse blowout method

The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.

Semiconductor device including a laser light blocking layer which overlaps fuses

On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.

Growing community of inventors

Tokyo, Japan

Takeshi Iwamoto