Symetrix Corporation

Olympus Optical Company, Ltd.

Takeshi Ito

Carlos Alberto Paz De Araujo

Michael C Scott

Larry D McMillan

Hitoshi Watanabe

Hiroyuki Yoshimori

Shuzo Hiraide

A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Special polyoxyalkylated precursor solutions are designed to optimize polarizability of the corresponding metal oxide materials by adding dopants including stoichiometric excess amounts of bismuth and tantalum. The RTP baking process is especially beneficial in optimizing the polarizability of the resultant metal oxide.

Process for fabricating layered superlattice materials and making

A thin-film zinc oxide varistor (10) for use in integrated circuits and the like is produced by applying a polyoxyalkylated metal complex, such as a metal alkoxycarboxylate, to a substrate (12, 14, and 16) for the formation of a dried nonohmic layer (18). The method of production includes the steps of providing a substrate and a precursor solution including a polyoxyalkylated zinc complex (P22, P24), coating a portion of the substrate with the precursor solution (P26), drying the coated substrate (P32), and crystallizing the dried thin-film zinc oxide layer (P30). The resultant crystalline zinc oxide varistor layer (18) may be doped with bismuth, yttrium, praseodymium, cobalt, antimony, manganese, silicon, chromium, titanium, potassium, dysprosium, cesium, cerium, and iron to provide a non-ohmic varistor. The varistor layer (10) is annealed at a temperature ranging from about 400 to about 1000.degree. C. to provide a layer having a thickness ranging from about 50 nanometers to about 500 nanometers and an average grain size diameter less than about 200 nanometers.

ZnO thin-film varistors and method of making the same

A liquid precursor containing a metal is applied to a first electrode, RTP baked at a temperature of 700.degree. C., and annealed at the same temperature for from 3 to 5 hours to form a layered superlattice material. A second electrode is formed to form a capacitor, and a second anneal is performed at a temperature of 700.degree. C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8.ltoreq.u.ltoreq.1.0, 2.0 v.ltoreq.2.3, and 1.9.ltoreq.w.ltoreq.2.1.

Low temperature process for fabricating layered superlattice

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Colorado Springs, CO, United States of America

Takeshi Ito