Tokyo Electron Limited

Tokyo Electron Limi Ted

Takeshi Itatani

Hideaki Yamasaki

Tadahiro Ishizaka

Kandabara N Tapily

Kai-Hung Yu

Takashi Mochizuki

Shinya Okabe

Wanjae Park

Masato Sakamoto

A method of pre-coating an inner surface of a chamber, which includes a surface of a substrate-supporting support base installed in an internal space in the chamber, includes: forming a first film on the inner surface by supplying a first gas; forming a second film on the first film by supplying a second gas; and forming a third film on the second film by supplying a third gas, wherein a flow rate ratio of a hydrogen-containing gas to a metal source gas in the first gas is set to be higher than flow rate ratios of the hydrogen-containing gas to the metal source gas in the second gas and the third gas, and wherein the flow rate of the metal source gas in the first gas is set to be lower than the flow rates of the metal source gas in the second gas and the third gas.

Pre-coating method and film forming method

There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.

Thermocouple-fixing jig

An etching method includes: adsorbing an adsorbate based on a processing gas containing BClgas onto a target object, which serves as a to-be-etched object, by: supplying Hgas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the Hgas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.

Etching method and etching apparatus

A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.

Vacuum processing apparatus and operation method thereof

A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.

Purging method

A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BClgas or a BClgas plasma generated by introducing BClgas, stopping introduction of the BClgas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.

Growing community of inventors

Nirasaki, Japan

Takeshi Itatani