Matsushita Electric Industrial Co., Ltd.

Martec Corporation

Takeshi Ishihara

Kazufumi Ogawa

Masaru Sasago

Masayuki Endo

Kenzo Hatada

Kiyoyuki Morita

Kenji Kanai

Fukashi Kobayashi

Hakuhei Kawakami

Hiroshi Sugaya

Shigeo Kuninobu

Keiichi Kagawa

Shinichiro Inukai

Nobuaki Suzuki

Satowaka Kuroda

Katsuhiro Taura

In a cordless telephone system having a mobile telephone set and a charging stand, the mobile telephone set includes at least one charging terminal and a charging control terminal, and control circuitry for monitoring the at least one charging terminal and the charging control terminal, and controlling whether or not the mobile telephone set is permitted to operate in a quick communication mode. The quick communication mode is a communication mode of the mobile telephone set in which the mobile telephone set automatically begins to transmit an outgoing call of the telephone system or to receive an incoming call, when the mobile telephone set is picked up from the charging stand.

Cordless telephone system having power interruption detection

A method and apparatus for forming a dielectric thin film or pattern thereof is provided in which a positive or negative resist of a desired pattern is formed on various substrates including a semiconductor substrate by contact of the resist with a liquefied gas or super critical fluid of CO.sub.2, NH.sub.3 or the like. Alternatively, a thin film of an organic or inorganic compound dissolved or dispersed in an organic solvent which has been formed on substrate becomes substantially free of any organic matter or functional groups by contact with the liquefied gas or super critical fluid. Semiconductor devices of high performance and high reliability are ensured.

Method for forming a dielectric thin film or its pattern of high

A method and apparatus for forming a dielectric thin film or pattern thereof is provided in which a positive or negative resist of a desired pattern if formed on various substrates including a semiconductor substrate by contact of the resist with a liquefied gas or super critical fluid of CO.sub.2, NH.sub.3 or the like. Alternatively, a thin film of an organic or inorganic compound dissolved or dispersed in an organic solvent which has been formed on substrate becomes substantially free of any organic matter or functional groups by contact with the liquefied gas or super critical fluid. Semiconductor devices of high performance and high reliability are ensured.

Tests of a semiconductor IC is conducted first by bringing a plurality of conductive pattern circuits formed on an insulator sheet into contact with a plurality of bump electrodes formed on a substrate of the semiconductor, second by connecting a plurality of signal transmission pattern circuits formed on a transmission circuit substrate with each conductive pattern circuit of the insulator sheet, and then by connecting the transmission circuit substrate with a body of the testing device. A probing test can be simplified since there is no need to manually adjust positions of conventional probe needles. Further, semiconductor ICs having a lot of bump electrodes can be test without being damaged.

Device for testing semiconductor integrated circuits and method of

Disclosed is an exposure apparatus used in photolithographic process in fabrication of semiconductor devices. More particularly, in an exposure apparatus using an excimer laser, the TTL alignment is achieved by using light with wavelengths of 300 to 400 nm, different from that of excimer laser for exposure, for the purpose of alignment.

Exposure apparatus

A reduction projection exposure apparatus includes an excimer laser beam source, and a concave spherical mirror disposed in the optical path between the light source optical system and a reticle, so as to minimize the overall height of the optical system (in particular, the reduction projection exposure apparatus) and to increase the degree of freedom of optical design. The apparatus is more than 25% shorter than the conventional apparatus, and a high degree of freedom is obtained in the optical design.

An exposure apparatus for use in manufacturing a semiconductor device which includes a KrF laser as an Excimer laser, a reduction projective type exposure optical system for applying laser beam emitted the laser on a wafer, and a support with vibration absorption function on which the KrF laser is mounted separately from the exposure optical system. The light axis of a light path between the KrF laser and the exposure optical system coincides with direction of vibration which is absorbed in the support. Thereby, shock wave produced from KrF laser upon discharge operation may be absorbed in said support without giving any bad effect to other components.

Disclosed is an exposure apparatus used in a photolithographic process in fabrication of semiconductor devices. More particularly, in the exposure apparatus using an excimer laser, the beam splitter, mirror and lens for correction for chromatic aberration are combined in the alignment optical system. Furthermore, a mirror is disposed at the opposite side of the image pickup camera of the alignment key by way of the beam splitter.

Method for correction for chromatic aberration and exposure apparatus

A method of masking semiconductor devices provided with selectively formed oxide film patterns, can be made by very precisely copying from selective oxidation mask patterns. The method in accordance with the present invention comprises

Method of making semiconductor devices

The present invention is an electronic time indicating signal clock of a hand indication type. It has a time indicating signal generating function marking time by one or more electronic tones and a correction function in which the number of tones made for a set time may be easily corrected.

Electronic clock having audible time indication

A time signal clock is equipped with a time indicating graduation, a dividing circuit for dividing a standard oscillation frequency, a drive for time indication provided with an electronic circuit for driving a pointer over the time indicating graduation by the signal from the dividing circuit, a time detecting device provided with a time detecting circuit for detecting a set time, a time signal electronic circuit receiving as its input signal the output signal from the time detecting device and a time signal device operated by the signal from the time signal electronic circuit.

Time signal clock

A method of making an MOS-type semiconductor device wherein the surface thereon for the conductors is flat. For this purpose, a polycrystalline silicon layer is provided and a part of the layer is selectively oxidized, so that the remaining portion of the layer acts as a lead for connecting a functional region such as a source region, a drain region etc. with the conductor layer. When said oxidization is performed, the diffusion from the polycrystalline silicon layer into the substrate occurs due to heating, so that said functional regions are formed at the same time.

Method of making a MOS-type semiconductor device

A flux sensitive magnetic head is disclosed which comprises conductive electrodes formed contiguous to the principal surface of a semiconductor substrate at a predetermined spacing, the electrodes being formed by evaporating or diffusing a conductive material on or into the substrate, and a flux sensitive element bridging the electrodes. This head may have a small size and is suited for constructing multi-track heads.

Magnetic head with thin film components

A small magnetic head is directly formed on a semiconductor substrate by using diffusion or evaporation techniques. A number of such small magnetic heads may be formed on the same substrate with high precision and high uniformity, and this is useful for constructing a multi-track head. If desired, a semiconductor integrated circuit may also be formed directly on the aforesaid semiconductor substrate.

Growing community of inventors

Neyagawa, Japan

Takeshi Ishihara